A 10-W X-Band Class-F High-Power Amplifier in a 0.25-μm GaAs pHEMT Technology

In this article, a design methodology is presented to realize integrated class-F high-power amplifiers (HPAs). A harmonic-control network (HCN) is proposed to present short- and open-circuit impedances to each transistor employed in the output stage of the HPA at {2}f_{0} and {3}f_{0} frequencie...

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