Relationship of drain induced barrier lowering and top/bottom gate oxide thickness in asymmetric junctionless double gate MOSFET

The relationship of drain induced barrier lowering (DIBL) phenomenon and channel length, silicon thickness, and thicknesses of top and bottom gate oxide films is derived for asymmetric junctionless double gate (JLDG) MOSFETs. The characteristics between the drain current and the gate voltage is deri...

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Veröffentlicht in:	International journal of electrical and computer engineering (Malacca, Malacca) Malacca), 2021-02, Vol.11 (1), p.232
1. Verfasser:	Jung, Hakkee
Format:	Artikel
Sprache:	eng
Schlagworte:	Asymmetry Circuits MOSFETs Oxide coatings Silicon Thickness Threshold voltage
Online-Zugang:	Volltext
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