n-Type doping of diamond by hot-filament chemical vapor deposition growth with phosphorus incorporation

Epitaxial growth of n-type semiconductor diamond films on (111)-oriented diamond has been achieved by hot-filament chemical vapor deposition (HFCVD) using a methane source and a trimethylphosphine dopant source. Secondary-ion mass spectrometry showed that the phosphorus atoms are incorporated into t...

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Veröffentlicht in:	Applied physics. A, Materials science & processing Materials science & processing, 2020-11, Vol.126 (11), Article 879
Hauptverfasser:	Katamune, Yūki, Mori, Daichi, Arikawa, Daisuke, Izumi, Akira, Shimaoka, Takehiro, Ichikawa, Kimiyoshi, Koizumi, Satoshi
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Atomic properties Characterization and Evaluation of Materials Chemical vapor deposition Condensed Matter Physics Diamond films Doping Electronic devices Epitaxial growth Filaments Hall effect Machines Manufacturing Materials science N-type semiconductors Nanotechnology Optical and Electronic Materials Phosphorus Physics Physics and Astronomy Processes Rapid Communications Secondary ion mass spectrometry Surfaces and Interfaces Thin Films Tungsten Vapor phases
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