A Decrease in the Exchange Bias Caused by an Increase in the Effective Thickness of the Copper Layer in the NiFe/Cu/IrMn Heterostructures

In a series of NiFe/Cu/IrMn structures with a variable effective thickness of the nonmagnetic copper interlayer (up to its absence in the NiFe/IrMn sample), we observed a decrease in the exchange bias and coercive force with an increase in the effective thickness of the copper layer. The coalescence...

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Veröffentlicht in:Physics of the solid state 2020-11, Vol.62 (11), p.1991-1997
Hauptverfasser: Morgunov, R. B., Bakhmet’ev, M. V., Talantsev, A. D.
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container_end_page 1997
container_issue 11
container_start_page 1991
container_title Physics of the solid state
container_volume 62
creator Morgunov, R. B.
Bakhmet’ev, M. V.
Talantsev, A. D.
description In a series of NiFe/Cu/IrMn structures with a variable effective thickness of the nonmagnetic copper interlayer (up to its absence in the NiFe/IrMn sample), we observed a decrease in the exchange bias and coercive force with an increase in the effective thickness of the copper layer. The coalescence of copper islands when the effective thickness of the copper layer reaches 1 nm changes the contact exchange interaction between the ferromagnet and antiferromagnet in NiFe–IrMn to indirect exchange interaction through the conduction electrons of the copper layer in NiFe–Cu–IrMn. The structural quality of single-crystal ferromagnetic and antiferromagnetic layers does not change, and the magnetization reversal occurs without the participation of domains in the temperature range of 2–300 K. Simulation of the deposition dynamics demonstrates the island structure of the film at the initial stages up to an effective thickness of 1 nm.
doi_str_mv 10.1134/S1063783420110207
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The structural quality of single-crystal ferromagnetic and antiferromagnetic layers does not change, and the magnetization reversal occurs without the participation of domains in the temperature range of 2–300 K. Simulation of the deposition dynamics demonstrates the island structure of the film at the initial stages up to an effective thickness of 1 nm.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S1063783420110207</doi><tpages>7</tpages></addata></record>
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subjects Antiferromagnetism
Bias
Coalescing
Coercivity
Conduction electrons
Copper
Crystal structure
Exchanging
Ferromagnetism
Heterostructures
Interlayers
Intermetallic compounds
Iron compounds
Magnetization
Magnetization reversal
Metals
Nickel compounds
Physics
Physics and Astronomy
Single crystals
Solid State Physics
Thickness
title A Decrease in the Exchange Bias Caused by an Increase in the Effective Thickness of the Copper Layer in the NiFe/Cu/IrMn Heterostructures
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