Enhancing the electrical properties of Bi4Ti3O12 (BiT) matrix by special alloying and sintering
In this work, the electrical properties of Bi 4 Ti 3 O 12 (BiT) were investigated; those presenting interesting electrical and dielectric properties in the radiofrequency (RF) and microwave (MW) range were analysed. BiT has many applications in telecommunication systems and MW circuits. It was synth...
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| Veröffentlicht in: | Journal of materials science. Materials in electronics 2020-12, Vol.31 (24), p.22265-22273 |
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| container_title | Journal of materials science. Materials in electronics |
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| creator | Bessa, V. L. De Morais, J. E. V. Oliveira, R. G. M. Freitas, D. B. Sales, J. C. Do Carmo, F. F. Silva, M. A. S. Gouveia, D. X. Sombra, A. S. B. |
| description | In this work, the electrical properties of Bi
4
Ti
3
O
12
(BiT) were investigated; those presenting interesting electrical and dielectric properties in the radiofrequency (RF) and microwave (MW) range were analysed. BiT has many applications in telecommunication systems and MW circuits. It was synthesized by the solid-state reaction method, and X-ray diffraction was used for structural characterization of this phase. The properties in the RF range were measured by impedance spectroscopy. An imaginary impedance relaxation peak and high values for real impedance were found. The complex impedance plane plots show the presence of a semicircle that was adjusted by an R-CPE circuit, presenting a thermoactive process for the load carriers. The dielectric properties in the MW range were measured using the Hakki–Coleman method, and the thermal stability was measured using the Silva–Fernandes–Sombra (SFS) technique. BiT was tested as an antenna and distant field parameters were measured and simulated. |
| doi_str_mv | 10.1007/s10854-020-04727-3 |
| format | Article |
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4
Ti
3
O
12
(BiT) were investigated; those presenting interesting electrical and dielectric properties in the radiofrequency (RF) and microwave (MW) range were analysed. BiT has many applications in telecommunication systems and MW circuits. It was synthesized by the solid-state reaction method, and X-ray diffraction was used for structural characterization of this phase. The properties in the RF range were measured by impedance spectroscopy. An imaginary impedance relaxation peak and high values for real impedance were found. The complex impedance plane plots show the presence of a semicircle that was adjusted by an R-CPE circuit, presenting a thermoactive process for the load carriers. The dielectric properties in the MW range were measured using the Hakki–Coleman method, and the thermal stability was measured using the Silva–Fernandes–Sombra (SFS) technique. BiT was tested as an antenna and distant field parameters were measured and simulated.</description><identifier>ISSN: 0957-4522</identifier><identifier>EISSN: 1573-482X</identifier><identifier>DOI: 10.1007/s10854-020-04727-3</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Bismuth titanate ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Circuits ; Dielectric properties ; Electric communication systems ; Electrical properties ; Materials Science ; Optical and Electronic Materials ; Radio frequency ; Structural analysis ; Thermal stability</subject><ispartof>Journal of materials science. Materials in electronics, 2020-12, Vol.31 (24), p.22265-22273</ispartof><rights>Springer Science+Business Media, LLC, part of Springer Nature 2020</rights><rights>Springer Science+Business Media, LLC, part of Springer Nature 2020.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c319t-5c4a6334d7803cacaf71f0398fca937f824945f8e21a1692f3ab66988622b55c3</citedby><cites>FETCH-LOGICAL-c319t-5c4a6334d7803cacaf71f0398fca937f824945f8e21a1692f3ab66988622b55c3</cites><orcidid>0000-0003-4419-9245</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s10854-020-04727-3$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s10854-020-04727-3$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,777,781,27905,27906,41469,42538,51300</link.rule.ids></links><search><creatorcontrib>Bessa, V. L.</creatorcontrib><creatorcontrib>De Morais, J. E. V.</creatorcontrib><creatorcontrib>Oliveira, R. G. M.</creatorcontrib><creatorcontrib>Freitas, D. B.</creatorcontrib><creatorcontrib>Sales, J. C.</creatorcontrib><creatorcontrib>Do Carmo, F. F.</creatorcontrib><creatorcontrib>Silva, M. A. S.</creatorcontrib><creatorcontrib>Gouveia, D. X.</creatorcontrib><creatorcontrib>Sombra, A. S. B.</creatorcontrib><title>Enhancing the electrical properties of Bi4Ti3O12 (BiT) matrix by special alloying and sintering</title><title>Journal of materials science. Materials in electronics</title><addtitle>J Mater Sci: Mater Electron</addtitle><description>In this work, the electrical properties of Bi
4
Ti
3
O
12
(BiT) were investigated; those presenting interesting electrical and dielectric properties in the radiofrequency (RF) and microwave (MW) range were analysed. BiT has many applications in telecommunication systems and MW circuits. It was synthesized by the solid-state reaction method, and X-ray diffraction was used for structural characterization of this phase. The properties in the RF range were measured by impedance spectroscopy. An imaginary impedance relaxation peak and high values for real impedance were found. The complex impedance plane plots show the presence of a semicircle that was adjusted by an R-CPE circuit, presenting a thermoactive process for the load carriers. The dielectric properties in the MW range were measured using the Hakki–Coleman method, and the thermal stability was measured using the Silva–Fernandes–Sombra (SFS) technique. BiT was tested as an antenna and distant field parameters were measured and simulated.</description><subject>Bismuth titanate</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Circuits</subject><subject>Dielectric properties</subject><subject>Electric communication systems</subject><subject>Electrical properties</subject><subject>Materials Science</subject><subject>Optical and Electronic Materials</subject><subject>Radio frequency</subject><subject>Structural analysis</subject><subject>Thermal stability</subject><issn>0957-4522</issn><issn>1573-482X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><sourceid>AFKRA</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNp9kE1LAzEURYMoWKt_wFXAjS6i-ZwkS1vqBxS6qeAupGliU6YzYzIF--9NHcGdq_Dg3PvyDgDXBN8TjOVDJlgJjjDFCHNJJWInYESEZIgr-n4KRlgLibig9Bxc5LzFGFecqREws2ZjGxebD9hvPPS1d32KztawS23nUx99hm2Ak8iXkS0IhbeTuLyDO1uwL7g6wNx5Fwtv67o9HHtss4Y5Nr1PZboEZ8HW2V_9vmPw9jRbTl_QfPH8On2cI8eI7pFw3FaM8bVUmDnrbJAkYKZVcFYzGRTlmougPCWWVJoGZldVpZWqKF0J4dgY3Ay95dufe597s233qSkrDeWSUUGl4IWiA-VSm3PywXQp7mw6GILNUaQZRJoi0vyINKyE2BDK3fEin_6q_0l9A1rRdLM</recordid><startdate>20201201</startdate><enddate>20201201</enddate><creator>Bessa, V. 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Materials in electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Bessa, V. L.</au><au>De Morais, J. E. V.</au><au>Oliveira, R. G. M.</au><au>Freitas, D. B.</au><au>Sales, J. C.</au><au>Do Carmo, F. F.</au><au>Silva, M. A. S.</au><au>Gouveia, D. X.</au><au>Sombra, A. S. B.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Enhancing the electrical properties of Bi4Ti3O12 (BiT) matrix by special alloying and sintering</atitle><jtitle>Journal of materials science. Materials in electronics</jtitle><stitle>J Mater Sci: Mater Electron</stitle><date>2020-12-01</date><risdate>2020</risdate><volume>31</volume><issue>24</issue><spage>22265</spage><epage>22273</epage><pages>22265-22273</pages><issn>0957-4522</issn><eissn>1573-482X</eissn><abstract>In this work, the electrical properties of Bi
4
Ti
3
O
12
(BiT) were investigated; those presenting interesting electrical and dielectric properties in the radiofrequency (RF) and microwave (MW) range were analysed. BiT has many applications in telecommunication systems and MW circuits. It was synthesized by the solid-state reaction method, and X-ray diffraction was used for structural characterization of this phase. The properties in the RF range were measured by impedance spectroscopy. An imaginary impedance relaxation peak and high values for real impedance were found. The complex impedance plane plots show the presence of a semicircle that was adjusted by an R-CPE circuit, presenting a thermoactive process for the load carriers. The dielectric properties in the MW range were measured using the Hakki–Coleman method, and the thermal stability was measured using the Silva–Fernandes–Sombra (SFS) technique. BiT was tested as an antenna and distant field parameters were measured and simulated.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s10854-020-04727-3</doi><tpages>9</tpages><orcidid>https://orcid.org/0000-0003-4419-9245</orcidid></addata></record> |
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| subjects | Bismuth titanate Characterization and Evaluation of Materials Chemistry and Materials Science Circuits Dielectric properties Electric communication systems Electrical properties Materials Science Optical and Electronic Materials Radio frequency Structural analysis Thermal stability |
| title | Enhancing the electrical properties of Bi4Ti3O12 (BiT) matrix by special alloying and sintering |
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