SnO/β-Ga2O3 vertical pn heterojunction diodes

As a contribution to (transparent) bipolar oxide electronics, vertical pn heterojunction diodes were prepared by plasma-assisted molecular beam epitaxy of unintentionally doped p-type SnO layers with hole concentrations ranging from p = 10 18 to 1019 cm−3 on unintentionally doped n-type β-Ga2O3(−201...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Applied physics letters 2020-12, Vol.117 (25)
Hauptverfasser:	Budde, Melanie, Splith, Daniel, Mazzolini, Piero, Tahraoui, Abbes, Feldl, Johannes, Ramsteiner, Manfred, von Wenckstern, Holger, Grundmann, Marius, Bierwagen, Oliver
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Breakdown Decoupling Depletion Diodes Electric contacts Electrical measurement Electrical properties Gallium oxides Heterojunctions Molecular beam epitaxy Substrates Thermionic emission
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!