Band structure properties, phonons, and exciton fine structure in 4H-SiC measured by wavelength-modulated absorption and low-temperature photoluminescence

Owing to its hexagonal symmetry, indirect band gap, and relatively large unit cell, the electronic band structure of 4H-SiC is comprised of a complicated series of anisotropic valence and conduction band extrema even very near to the uppermost valence band maximum and lowest conduction band minimum....

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Veröffentlicht in:	Physical review. B 2020-11, Vol.102 (20), p.205203
Hauptverfasser:	Klahold, W M, Choyke, W J, Devaty, R P
Format:	Artikel
Sprache:	eng
Schlagworte:	Absorption Anisotropy Band structure of solids Conduction bands Electrons Excitons Fine structure Holes (electron deficiencies) Low temperature Photoluminescence Unit cell Valence band
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