Reaction mechanism transformation of LPCVD-grown MoS2 from isolated triangular grains to continuous films

Two-dimensional (2D) MoS2 and other transition metal dichalcogenides (TMDs) provide an unprecedented prospect of atomic-level semiconducting physics, vdW integration and novel applications. Many efforts have been devoted to chemical vapor deposition (CVD) synthesis of 2D layered MoS2 in various shap...

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Veröffentlicht in:	Journal of alloys and compounds 2021-02, Vol.853, p.157374, Article 157374
Hauptverfasser:	Cheng, Jiadong, Shen, Chengtao, He, Yingfeng, Wei, Huiyun, Liu, Sanjie, Qiu, Peng, Song, Yimeng, Wei, Shu, Wang, Zixian, Zheng, Xinhe, Peng, Mingzeng
Format:	Artikel
Sprache:	eng
Schlagworte:	Bilayers Chemical synthesis Chemical vapor deposition Continuous films Low pressure LPCVD Molybdenum disulfide Molybdenum oxides Molybdenum trioxide Morphology MoS2 Optoelectronic devices Partial pressure Reaction mechanism Reaction mechanisms Substrates Thin films Transition metal compounds Transition metal dichalcogenides
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