Design of mm-Wave Slow-Wave-Coupled Coplanar Waveguides
This article focuses on the design of high-performance coupled slow-wave coplanar waveguide (CS-CPW) in CMOS technologies for the millimeter-wave (mm-wave) frequency bands. First, the theory as well as the electrical model of the CS-CPW are presented. Next, the analytical approach for the calculatio...
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| Veröffentlicht in: | IEEE transactions on microwave theory and techniques 2020-12, Vol.68 (12), p.5014-5028 |
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| creator | Margalef-Rovira, Marc Lugo-Alvarez, Jose Bautista, Alfredo Vincent, Loic Lepilliet, Sylvie Saadi, Abdelhalim A. Podevin, Florence Barragan, Manuel J. Pistono, Emmanuel Bourdel, Sylvain Gaquiere, Christophe Ferrari, Philippe |
| description | This article focuses on the design of high-performance coupled slow-wave coplanar waveguide (CS-CPW) in CMOS technologies for the millimeter-wave (mm-wave) frequency bands. First, the theory as well as the electrical model of the CS-CPW are presented. Next, the analytical approach for the calculation of the model parameters is discussed. Then, by using the developed model, two mm-wave backward directional 3-dB couplers are designed in a bipolar complementary metal-oxide-semiconductor (BiCMOS) 55-nm technology for 120- and 185-GHz operation, respectively. Simulation and experimental results demonstrate that the use of the CS-CPW concept leads to state-of-the-art performance, with a good agreement between the analytical model, electromagnetic simulations, and measurement results. |
| doi_str_mv | 10.1109/TMTT.2020.3015974 |
| format | Article |
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First, the theory as well as the electrical model of the CS-CPW are presented. Next, the analytical approach for the calculation of the model parameters is discussed. Then, by using the developed model, two mm-wave backward directional 3-dB couplers are designed in a bipolar complementary metal-oxide-semiconductor (BiCMOS) 55-nm technology for 120- and 185-GHz operation, respectively. Simulation and experimental results demonstrate that the use of the CS-CPW concept leads to state-of-the-art performance, with a good agreement between the analytical model, electromagnetic simulations, and measurement results.</description><identifier>ISSN: 0018-9480</identifier><identifier>EISSN: 1557-9670</identifier><identifier>DOI: 10.1109/TMTT.2020.3015974</identifier><identifier>CODEN: IETMAB</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Band theory ; BiCMOS integrated circuits ; CMOS ; CMOS/bipolar complementary metal–oxide–semiconductor (BiCMOS) technology ; Coplanar waveguides ; Couplers ; coupling coefficient ; directional couplers ; Engineering Sciences ; Frequencies ; Integrated circuit modeling ; Mathematical models ; Micro and nanotechnologies ; Microelectronics ; Microstrip ; Millimeter waves ; Semiconductor device modeling ; slow-wave concept ; Strips ; Topology</subject><ispartof>IEEE transactions on microwave theory and techniques, 2020-12, Vol.68 (12), p.5014-5028</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. 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First, the theory as well as the electrical model of the CS-CPW are presented. Next, the analytical approach for the calculation of the model parameters is discussed. Then, by using the developed model, two mm-wave backward directional 3-dB couplers are designed in a bipolar complementary metal-oxide-semiconductor (BiCMOS) 55-nm technology for 120- and 185-GHz operation, respectively. 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| subjects | Band theory BiCMOS integrated circuits CMOS CMOS/bipolar complementary metal–oxide–semiconductor (BiCMOS) technology Coplanar waveguides Couplers coupling coefficient directional couplers Engineering Sciences Frequencies Integrated circuit modeling Mathematical models Micro and nanotechnologies Microelectronics Microstrip Millimeter waves Semiconductor device modeling slow-wave concept Strips Topology |
| title | Design of mm-Wave Slow-Wave-Coupled Coplanar Waveguides |
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