Electrically tunable detector of THz-frequency signals based on an antiferromagnet
A concept of an electrically tunable resonance detector of THz-frequency signals based on an antiferromagnetic/heavy metal (AFM/HM) heterostructure is proposed. The conversion of a THz-frequency input signal into DC voltage is done using the inverse spin Hall effect in an (AFM/HM) bilayer. An additi...
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| Veröffentlicht in: | Applied physics letters 2020-11, Vol.117 (22) |
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| container_title | Applied physics letters |
| container_volume | 117 |
| creator | Safin, A. Puliafito, V. Carpentieri, M. Finocchio, G. Nikitov, S. Stremoukhov, P. Kirilyuk, A. Tyberkevych, V. Slavin, A. |
| description | A concept of an electrically tunable resonance detector of THz-frequency signals based on an antiferromagnetic/heavy metal (AFM/HM) heterostructure is proposed. The conversion of a THz-frequency input signal into DC voltage is done using the inverse spin Hall effect in an (AFM/HM) bilayer. An additional bias DC in the HM layer can be used to vary the effective anisotropy of the AFM and, therefore, to tune the antiferromagnetic resonance (AFMR) frequency. The proposed AFM/HM heterostructure works as a resonance-type quadratic detector, which can be tuned by the bias current in the range of at least 10% of the AFMR frequency, and our estimations show that the sensitivity of this detector could be comparable to that of modern detectors based on the Schottky, Gunn, or graphene-based diodes. |
| doi_str_mv | 10.1063/5.0031053 |
| format | Article |
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The conversion of a THz-frequency input signal into DC voltage is done using the inverse spin Hall effect in an (AFM/HM) bilayer. An additional bias DC in the HM layer can be used to vary the effective anisotropy of the AFM and, therefore, to tune the antiferromagnetic resonance (AFMR) frequency. The proposed AFM/HM heterostructure works as a resonance-type quadratic detector, which can be tuned by the bias current in the range of at least 10% of the AFMR frequency, and our estimations show that the sensitivity of this detector could be comparable to that of modern detectors based on the Schottky, Gunn, or graphene-based diodes.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/5.0031053</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Anisotropy ; Antiferromagnetism ; Applied physics ; Bias ; Bilayers ; Graphene ; Hall effect ; Heavy metals ; Heterostructures ; Resonance ; Schottky diodes ; Sensors</subject><ispartof>Applied physics letters, 2020-11, Vol.117 (22)</ispartof><rights>Author(s)</rights><rights>2020 Author(s). 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The conversion of a THz-frequency input signal into DC voltage is done using the inverse spin Hall effect in an (AFM/HM) bilayer. An additional bias DC in the HM layer can be used to vary the effective anisotropy of the AFM and, therefore, to tune the antiferromagnetic resonance (AFMR) frequency. The proposed AFM/HM heterostructure works as a resonance-type quadratic detector, which can be tuned by the bias current in the range of at least 10% of the AFMR frequency, and our estimations show that the sensitivity of this detector could be comparable to that of modern detectors based on the Schottky, Gunn, or graphene-based diodes.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0031053</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0003-1479-9872</orcidid><orcidid>https://orcid.org/0000-0003-4438-538X</orcidid><orcidid>https://orcid.org/0000-0001-5165-5873</orcidid><orcidid>https://orcid.org/0000-0002-1628-9326</orcidid><orcidid>https://orcid.org/0000-0001-6507-6573</orcidid><orcidid>https://orcid.org/0000-0002-4913-1082</orcidid><oa>free_for_read</oa></addata></record> |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Anisotropy Antiferromagnetism Applied physics Bias Bilayers Graphene Hall effect Heavy metals Heterostructures Resonance Schottky diodes Sensors |
| title | Electrically tunable detector of THz-frequency signals based on an antiferromagnet |
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