Development of SiC Merged Reverse Conductive Devices
SiC merged reverse conductive (MRC) power devices composed of both unipolar devices and bipolar devices have been developed to achieve a smaller chip size, a lower power loss and a higher reliability. SiC MRC power devices such as SiC MRC-MOSFET and SiC MRC-IGBT can achieve this performance, but hav...
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| Veröffentlicht in: | IEEJ JOURNAL OF INDUSTRY APPLICATIONS 2020/12/01, Vol.140(12), pp.972-982 |
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| container_title | IEEJ JOURNAL OF INDUSTRY APPLICATIONS |
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| creator | Sugawara, Yoshitaka |
| description | SiC merged reverse conductive (MRC) power devices composed of both unipolar devices and bipolar devices have been developed to achieve a smaller chip size, a lower power loss and a higher reliability. SiC MRC power devices such as SiC MRC-MOSFET and SiC MRC-IGBT can achieve this performance, but have the problems of on-voltage degradation and a large snap-back voltage. The former has been solved by the newly developed majority carrier heating-TEDREC (MaCH-TEDREC) method and the latter has been solved by both the newly developed double buffer device structure and novel standard cells with pilot IGBT. |
| doi_str_mv | 10.1541/ieejias.140.972 |
| format | Article |
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SiC MRC power devices such as SiC MRC-MOSFET and SiC MRC-IGBT can achieve this performance, but have the problems of on-voltage degradation and a large snap-back voltage. The former has been solved by the newly developed majority carrier heating-TEDREC (MaCH-TEDREC) method and the latter has been solved by both the newly developed double buffer device structure and novel standard cells with pilot IGBT.</description><identifier>ISSN: 0913-6339</identifier><identifier>ISSN: 2187-1094</identifier><identifier>EISSN: 1348-8163</identifier><identifier>EISSN: 2187-1108</identifier><identifier>DOI: 10.1541/ieejias.140.972</identifier><language>jpn</language><publisher>Tokyo: The Institute of Electrical Engineers of Japan</publisher><subject>Electric potential ; Electronic devices ; Majority carriers ; MOSFETs ; SiC MRC-device ; SiC MRC-IGBT ; SiC MRC-MOSFET ; SiC pn diode ; SiC-Inverter ; TEDREC ; Voltage</subject><ispartof>IEEJ Transactions on Industry Applications, 2020/12/01, Vol.140(12), pp.972-982</ispartof><rights>2020 by the Institute of Electrical Engineers of Japan</rights><rights>Copyright Japan Science and Technology Agency 2020</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>315,781,785,27929,27930</link.rule.ids></links><search><creatorcontrib>Sugawara, Yoshitaka</creatorcontrib><title>Development of SiC Merged Reverse Conductive Devices</title><title>IEEJ JOURNAL OF INDUSTRY APPLICATIONS</title><addtitle>IEEJ Trans. 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The former has been solved by the newly developed majority carrier heating-TEDREC (MaCH-TEDREC) method and the latter has been solved by both the newly developed double buffer device structure and novel standard cells with pilot IGBT.</description><subject>Electric potential</subject><subject>Electronic devices</subject><subject>Majority carriers</subject><subject>MOSFETs</subject><subject>SiC MRC-device</subject><subject>SiC MRC-IGBT</subject><subject>SiC MRC-MOSFET</subject><subject>SiC pn diode</subject><subject>SiC-Inverter</subject><subject>TEDREC</subject><subject>Voltage</subject><issn>0913-6339</issn><issn>2187-1094</issn><issn>1348-8163</issn><issn>2187-1108</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNo9kM9LwzAYhoMoOObOXgueO_MladocpfMXTATdPaTNl5mytTNpB_73Bjc8vYf34X3hIeQW6BIKAfcesfMmLkHQpSrZBZkBF1VegeSXZEYV8Fxyrq7JIkbfUA6lAApiRsQKj7gbDnvsx2xw2aevszcMW7TZR2pCxKweeju1oz9ilmDfYrwhV87sIi7OOSebp8dN_ZKv359f64d13lUK8tZZLEA4WxlUWFoqGyep4dYJ1RYCmQVOi5I77kqF1hlgBqmQFTUlsIbxObk7zR7C8D1hHHU3TKFPj5oJKWkBBYVErU5UF0ezRX0Ifm_CjzZh9O0O9VmNTmo0sL9Ihv7r9ssEjT3_Bb4lYOQ</recordid><startdate>20201201</startdate><enddate>20201201</enddate><creator>Sugawara, Yoshitaka</creator><general>The Institute of Electrical Engineers of Japan</general><general>Japan Science and Technology Agency</general><scope>7SP</scope><scope>7TB</scope><scope>8FD</scope><scope>FR3</scope><scope>L7M</scope></search><sort><creationdate>20201201</creationdate><title>Development of SiC Merged Reverse Conductive Devices</title><author>Sugawara, Yoshitaka</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-j891-cfde514fd8ae9e7d06bf60a3df49c54e2d130573f3f79edfa12ae04680a712b23</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>jpn</language><creationdate>2020</creationdate><topic>Electric potential</topic><topic>Electronic devices</topic><topic>Majority carriers</topic><topic>MOSFETs</topic><topic>SiC MRC-device</topic><topic>SiC MRC-IGBT</topic><topic>SiC MRC-MOSFET</topic><topic>SiC pn diode</topic><topic>SiC-Inverter</topic><topic>TEDREC</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sugawara, Yoshitaka</creatorcontrib><collection>Electronics & Communications Abstracts</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Technology Research Database</collection><collection>Engineering Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEJ JOURNAL OF INDUSTRY APPLICATIONS</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sugawara, Yoshitaka</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Development of SiC Merged Reverse Conductive Devices</atitle><jtitle>IEEJ JOURNAL OF INDUSTRY APPLICATIONS</jtitle><addtitle>IEEJ Trans. IA</addtitle><date>2020-12-01</date><risdate>2020</risdate><volume>140</volume><issue>12</issue><spage>972</spage><epage>982</epage><pages>972-982</pages><issn>0913-6339</issn><issn>2187-1094</issn><eissn>1348-8163</eissn><eissn>2187-1108</eissn><abstract>SiC merged reverse conductive (MRC) power devices composed of both unipolar devices and bipolar devices have been developed to achieve a smaller chip size, a lower power loss and a higher reliability. SiC MRC power devices such as SiC MRC-MOSFET and SiC MRC-IGBT can achieve this performance, but have the problems of on-voltage degradation and a large snap-back voltage. The former has been solved by the newly developed majority carrier heating-TEDREC (MaCH-TEDREC) method and the latter has been solved by both the newly developed double buffer device structure and novel standard cells with pilot IGBT.</abstract><cop>Tokyo</cop><pub>The Institute of Electrical Engineers of Japan</pub><doi>10.1541/ieejias.140.972</doi><tpages>11</tpages></addata></record> |
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| ispartof | IEEJ Transactions on Industry Applications, 2020/12/01, Vol.140(12), pp.972-982 |
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| language | jpn |
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| source | J-STAGE Free; EZB-FREE-00999 freely available EZB journals |
| subjects | Electric potential Electronic devices Majority carriers MOSFETs SiC MRC-device SiC MRC-IGBT SiC MRC-MOSFET SiC pn diode SiC-Inverter TEDREC Voltage |
| title | Development of SiC Merged Reverse Conductive Devices |
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