Sn doping of (010) β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy

Sn doping of (010) β-Ga2O3 grown by conventional plasma-assisted molecular beam epitaxy (PAMBE) and via metal oxide catalyzed epitaxy (MOCATAXY) using a supplied indium flux during molecular beam epitaxy (MBE) growth was investigated. While high Sn concentrations were achievable over a range of grow...

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Veröffentlicht in:	Applied physics letters 2020-11, Vol.117 (22)
Hauptverfasser:	Mauze, Akhil, Zhang, Yuewei, Itoh, Takeki, Ahmadi, Elaheh, Speck, James S.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Conduction bands Cryogenic temperature Doping Electron mobility Epitaxial growth Gallium oxides Hall effect Impurities Metal oxides Molecular beam epitaxy Room temperature Temperature dependence
Online-Zugang:	Volltext
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