Mirror Finishing of SiC by UV-Assisted Constant-Pressure Grinding

Silicon carbide (SiC) is a next-generation semiconductor material. However, SiC is difficult to machine because it has high mechanical hardness and chemical inertness. Therefore, high-quality processing technology with high efficiency is now required. In our previous study, the authors developed UV-...

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Veröffentlicht in:	International journal of automation technology 2019-11, Vol.13 (6), p.749-755
Hauptverfasser:	Mekata, Moe, Ota, Minoru, Yamaguchi, Keishi, Egashira, Kai
Format:	Artikel
Sprache:	eng
Schlagworte:	Abrasive wheels Diamonds Grains Grinding Irradiation Lapping (finishing) Polishing Semiconductor materials Silicon carbide Surface roughness Ultraviolet radiation
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