Methodology to Investigate Impact of Grain Orientation on Threshold Voltage and Current Variability in Tunneling Field-Effect Transistors
In this article, an investigation has been performed to statistically analyze the entire subthreshold characteristics of tunnel field-effect transistor (TFET) depending on a gate work function variation (WFV). Firstly, the current variations are evaluated through turn-on voltage ( {V} _{\mathrm{ ON}...
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| Veröffentlicht in: | IEEE journal of the Electron Devices Society 2020, Vol.8, p.1345-1349 |
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| creator | Kim, Jang Hyun Kim, Tae Chan Kim, Garam Kim, Hyun Woo Kim, Sangwan |
| description | In this article, an investigation has been performed to statistically analyze the entire subthreshold characteristics of tunnel field-effect transistor (TFET) depending on a gate work function variation (WFV). Firstly, the current variations are evaluated through turn-on voltage ( {V} _{\mathrm{ ON}} ) and threshold voltage ( V_{T} ) with help of technology computer-aided design (TCAD) simulation. Secondly, the variation of V_{T} and {V} _{\mathrm{ ON}} are quantitatively analyzed by coefficient of determination ( {R} ^{2} ) in the regression analysis. The {R} ^{2} values are extracted according to the divided the gate prats. Finally, it is confirmed that the WFV of the gate parts causes the current variation in areas where tunneling is varied mainly according to the gate bias. |
| doi_str_mv | 10.1109/JEDS.2020.3033313 |
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Firstly, the current variations are evaluated through turn-on voltage (<inline-formula> <tex-math notation="LaTeX">{V} _{\mathrm{ ON}} </tex-math></inline-formula>) and threshold voltage (<inline-formula> <tex-math notation="LaTeX">V_{T} </tex-math></inline-formula>) with help of technology computer-aided design (TCAD) simulation. Secondly, the variation of <inline-formula> <tex-math notation="LaTeX">V_{T} </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">{V} _{\mathrm{ ON}} </tex-math></inline-formula> are quantitatively analyzed by coefficient of determination (<inline-formula> <tex-math notation="LaTeX">{R} ^{2} </tex-math></inline-formula>) in the regression analysis. The <inline-formula> <tex-math notation="LaTeX">{R} ^{2} </tex-math></inline-formula> values are extracted according to the divided the gate prats. Finally, it is confirmed that the WFV of the gate parts causes the current variation in areas where tunneling is varied mainly according to the gate bias.]]></description><identifier>ISSN: 2168-6734</identifier><identifier>EISSN: 2168-6734</identifier><identifier>DOI: 10.1109/JEDS.2020.3033313</identifier><identifier>CODEN: IJEDAC</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Band-to-band tunneling ; CAD ; Coefficient of variation ; Computer aided design ; Correlation ; Field effect transistors ; Grain orientation ; Junctions ; Logic gates ; Metals ; Regression analysis ; Semiconductor devices ; TFETs ; Threshold voltage ; tunnel field-effect transistor (TFET) ; Tunneling ; Work functions ; work-function variation (WFV)</subject><ispartof>IEEE journal of the Electron Devices Society, 2020, Vol.8, p.1345-1349</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2020</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c402t-9ab2d3bd54bae16084352f0f4c32c705b48678d7514701909f673f1be47e153e3</citedby><cites>FETCH-LOGICAL-c402t-9ab2d3bd54bae16084352f0f4c32c705b48678d7514701909f673f1be47e153e3</cites><orcidid>0000-0002-3072-0258 ; 0000-0002-6492-7740 ; 0000-0002-5936-4314</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9238013$$EHTML$$P50$$Gieee$$Hfree_for_read</linktohtml><link.rule.ids>315,781,785,865,2103,4025,27635,27925,27926,27927,54935</link.rule.ids></links><search><creatorcontrib>Kim, Jang Hyun</creatorcontrib><creatorcontrib>Kim, Tae Chan</creatorcontrib><creatorcontrib>Kim, Garam</creatorcontrib><creatorcontrib>Kim, Hyun Woo</creatorcontrib><creatorcontrib>Kim, Sangwan</creatorcontrib><title>Methodology to Investigate Impact of Grain Orientation on Threshold Voltage and Current Variability in Tunneling Field-Effect Transistors</title><title>IEEE journal of the Electron Devices Society</title><addtitle>JEDS</addtitle><description><![CDATA[In this article, an investigation has been performed to statistically analyze the entire subthreshold characteristics of tunnel field-effect transistor (TFET) depending on a gate work function variation (WFV). Firstly, the current variations are evaluated through turn-on voltage (<inline-formula> <tex-math notation="LaTeX">{V} _{\mathrm{ ON}} </tex-math></inline-formula>) and threshold voltage (<inline-formula> <tex-math notation="LaTeX">V_{T} </tex-math></inline-formula>) with help of technology computer-aided design (TCAD) simulation. Secondly, the variation of <inline-formula> <tex-math notation="LaTeX">V_{T} </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">{V} _{\mathrm{ ON}} </tex-math></inline-formula> are quantitatively analyzed by coefficient of determination (<inline-formula> <tex-math notation="LaTeX">{R} ^{2} </tex-math></inline-formula>) in the regression analysis. The <inline-formula> <tex-math notation="LaTeX">{R} ^{2} </tex-math></inline-formula> values are extracted according to the divided the gate prats. Finally, it is confirmed that the WFV of the gate parts causes the current variation in areas where tunneling is varied mainly according to the gate bias.]]></description><subject>Band-to-band tunneling</subject><subject>CAD</subject><subject>Coefficient of variation</subject><subject>Computer aided design</subject><subject>Correlation</subject><subject>Field effect transistors</subject><subject>Grain orientation</subject><subject>Junctions</subject><subject>Logic gates</subject><subject>Metals</subject><subject>Regression analysis</subject><subject>Semiconductor devices</subject><subject>TFETs</subject><subject>Threshold voltage</subject><subject>tunnel field-effect transistor (TFET)</subject><subject>Tunneling</subject><subject>Work functions</subject><subject>work-function variation (WFV)</subject><issn>2168-6734</issn><issn>2168-6734</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><sourceid>ESBDL</sourceid><sourceid>RIE</sourceid><sourceid>DOA</sourceid><recordid>eNpNkc1qGzEUhYfQQkOaByjdCLoeV3-jmVkG10lcUrKom624M7oay0wkV5ILfoS-deQ6hAqBxNU5n650quoTowvGaP_1--rbzwWnnC4EFUIwcVFdcqa6WrVCvvtv_6G6TmlHy-iY6pW6rP7-wLwNJsxhOpIcyNr_wZTdBBnJ-nkPYybBkrsIzpPH6NBnyC54UuZmGzFtw2zIU5gzTEjAG7I8xFhU5Amig8HNLh9J8W4O3uPs_ERuHc6mXlmLhb2J4JNLOcT0sXpvYU54_bpeVb9uV5vlff3weLde3jzUo6Q81z0M3IjBNHIAZIp2UjTcUitHwceWNoPsVNuZtmGypaynvS0Pt2xA2SJrBIqran3mmgA7vY_uGeJRB3D6XyHESUPMbpxRAwPRIQ6o7CC5hG4Exgq56xuDUvHC-nJm7WP4fSgfp3fhEH1pX3OpGin6lqqiYmfVGENKEe3brYzqU4D6FKA-BahfAyyez2ePQ8Q3fc9FR8vpC_zul4Y</recordid><startdate>2020</startdate><enddate>2020</enddate><creator>Kim, Jang Hyun</creator><creator>Kim, Tae Chan</creator><creator>Kim, Garam</creator><creator>Kim, Hyun Woo</creator><creator>Kim, Sangwan</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>ESBDL</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>DOA</scope><orcidid>https://orcid.org/0000-0002-3072-0258</orcidid><orcidid>https://orcid.org/0000-0002-6492-7740</orcidid><orcidid>https://orcid.org/0000-0002-5936-4314</orcidid></search><sort><creationdate>2020</creationdate><title>Methodology to Investigate Impact of Grain Orientation on Threshold Voltage and Current Variability in Tunneling Field-Effect Transistors</title><author>Kim, Jang Hyun ; Kim, Tae Chan ; Kim, Garam ; Kim, Hyun Woo ; Kim, Sangwan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c402t-9ab2d3bd54bae16084352f0f4c32c705b48678d7514701909f673f1be47e153e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Band-to-band tunneling</topic><topic>CAD</topic><topic>Coefficient of variation</topic><topic>Computer aided design</topic><topic>Correlation</topic><topic>Field effect transistors</topic><topic>Grain orientation</topic><topic>Junctions</topic><topic>Logic gates</topic><topic>Metals</topic><topic>Regression analysis</topic><topic>Semiconductor devices</topic><topic>TFETs</topic><topic>Threshold voltage</topic><topic>tunnel field-effect transistor (TFET)</topic><topic>Tunneling</topic><topic>Work functions</topic><topic>work-function variation (WFV)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kim, Jang Hyun</creatorcontrib><creatorcontrib>Kim, Tae Chan</creatorcontrib><creatorcontrib>Kim, Garam</creatorcontrib><creatorcontrib>Kim, Hyun Woo</creatorcontrib><creatorcontrib>Kim, Sangwan</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE Open Access Journals</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>DOAJ Directory of Open Access Journals</collection><jtitle>IEEE journal of the Electron Devices Society</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kim, Jang Hyun</au><au>Kim, Tae Chan</au><au>Kim, Garam</au><au>Kim, Hyun Woo</au><au>Kim, Sangwan</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Methodology to Investigate Impact of Grain Orientation on Threshold Voltage and Current Variability in Tunneling Field-Effect Transistors</atitle><jtitle>IEEE journal of the Electron Devices Society</jtitle><stitle>JEDS</stitle><date>2020</date><risdate>2020</risdate><volume>8</volume><spage>1345</spage><epage>1349</epage><pages>1345-1349</pages><issn>2168-6734</issn><eissn>2168-6734</eissn><coden>IJEDAC</coden><abstract><![CDATA[In this article, an investigation has been performed to statistically analyze the entire subthreshold characteristics of tunnel field-effect transistor (TFET) depending on a gate work function variation (WFV). Firstly, the current variations are evaluated through turn-on voltage (<inline-formula> <tex-math notation="LaTeX">{V} _{\mathrm{ ON}} </tex-math></inline-formula>) and threshold voltage (<inline-formula> <tex-math notation="LaTeX">V_{T} </tex-math></inline-formula>) with help of technology computer-aided design (TCAD) simulation. Secondly, the variation of <inline-formula> <tex-math notation="LaTeX">V_{T} </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">{V} _{\mathrm{ ON}} </tex-math></inline-formula> are quantitatively analyzed by coefficient of determination (<inline-formula> <tex-math notation="LaTeX">{R} ^{2} </tex-math></inline-formula>) in the regression analysis. The <inline-formula> <tex-math notation="LaTeX">{R} ^{2} </tex-math></inline-formula> values are extracted according to the divided the gate prats. Finally, it is confirmed that the WFV of the gate parts causes the current variation in areas where tunneling is varied mainly according to the gate bias.]]></abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/JEDS.2020.3033313</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0002-3072-0258</orcidid><orcidid>https://orcid.org/0000-0002-6492-7740</orcidid><orcidid>https://orcid.org/0000-0002-5936-4314</orcidid><oa>free_for_read</oa></addata></record> |
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| subjects | Band-to-band tunneling CAD Coefficient of variation Computer aided design Correlation Field effect transistors Grain orientation Junctions Logic gates Metals Regression analysis Semiconductor devices TFETs Threshold voltage tunnel field-effect transistor (TFET) Tunneling Work functions work-function variation (WFV) |
| title | Methodology to Investigate Impact of Grain Orientation on Threshold Voltage and Current Variability in Tunneling Field-Effect Transistors |
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