Contactless measurement of sheet resistance and mobility of inversion charge carriers on photovoltaic wafers
A new application of the differential junction photovoltage (diff-JPV) measurement technique is introduced. The technique's capability to determine the sheet resistance of charge carriers in inversion layers Rs,inv for silicon wafers coated by different dielectrics is investigated. The dielectr...
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description | A new application of the differential junction photovoltage (diff-JPV) measurement technique is introduced. The technique's capability to determine the sheet resistance of charge carriers in inversion layers Rs,inv for silicon wafers coated by different dielectrics is investigated. The dielectrics - SiOx, SiNx and AlOx – used in this study are all highly relevant for photovoltaic applications, especially for inversion layer solar cell concepts.
The newly developed generalized measurement routine and evaluation utilizing the phase dependent surface potential signals of the diff-JPV sensor resulted in a very rapid Rs,inv extraction even in the very high (>10 kΩ/sq.) Rs,inv range which is typical for inversion layers.
However, reference inversion layer sheet resistance values can be hardly obtained without the fabrication of test devices. Thus, to validate the reliability of the diff-JPV measurement an indirect method is applied by measuring the mobility of the inversion charge carriers from the Rs,inv results after sequential surface corona charging steps.
A very sharp transition of the diff-JPV results is observed showing significant signal in the inversion regime exclusively and providing Rs,inv results in the expected range. The inversion charge carrier mobility data, calculated from the Rs,inv versus surface charge plots, are consistent and comparable to those found from device tests. Sheet resistance and mobility results exhibit high sensitivity to the surface morphology (i.e, textured versus polished), the interface quality and the amount of charge within the given dielectrics.
The contactless JPV is proven to be a fast and efficient way for the rapid characterization of inversion layers properties. It can even be accomplished in production lines in case of future industrialization of inversion layer based solar cell technologies.
•Differential JPV measurement is proven to provide contactless and reliable determination of sheet resistance of inversion charge carriers within 1 s.•Differential JPV technique detects and qualifies inversion layers induced by fixed charges within SiNx and AlOx layers.•Accurate sheet resistance test method for cell concepts utilizing inversion layers, e.g. inversion layer solar cells, applicable even in production lines.•Differential JPV combined with corona charging provides the contactless mobility measurement of inversion charge carriers without test device fabrication.•Contactless mobility results feature high sensitivit |
doi_str_mv | 10.1016/j.solmat.2020.110766 |
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The newly developed generalized measurement routine and evaluation utilizing the phase dependent surface potential signals of the diff-JPV sensor resulted in a very rapid Rs,inv extraction even in the very high (>10 kΩ/sq.) Rs,inv range which is typical for inversion layers.
However, reference inversion layer sheet resistance values can be hardly obtained without the fabrication of test devices. Thus, to validate the reliability of the diff-JPV measurement an indirect method is applied by measuring the mobility of the inversion charge carriers from the Rs,inv results after sequential surface corona charging steps.
A very sharp transition of the diff-JPV results is observed showing significant signal in the inversion regime exclusively and providing Rs,inv results in the expected range. The inversion charge carrier mobility data, calculated from the Rs,inv versus surface charge plots, are consistent and comparable to those found from device tests. Sheet resistance and mobility results exhibit high sensitivity to the surface morphology (i.e, textured versus polished), the interface quality and the amount of charge within the given dielectrics.
The contactless JPV is proven to be a fast and efficient way for the rapid characterization of inversion layers properties. It can even be accomplished in production lines in case of future industrialization of inversion layer based solar cell technologies.
•Differential JPV measurement is proven to provide contactless and reliable determination of sheet resistance of inversion charge carriers within 1 s.•Differential JPV technique detects and qualifies inversion layers induced by fixed charges within SiNx and AlOx layers.•Accurate sheet resistance test method for cell concepts utilizing inversion layers, e.g. inversion layer solar cells, applicable even in production lines.•Differential JPV combined with corona charging provides the contactless mobility measurement of inversion charge carriers without test device fabrication.•Contactless mobility results feature high sensitivity to interface quality and surface morphology but not influenced by fixed charges.</description><identifier>ISSN: 0927-0248</identifier><identifier>EISSN: 1879-3398</identifier><identifier>DOI: 10.1016/j.solmat.2020.110766</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Carrier mobility ; Current carriers ; Dielectrics ; Electrical resistivity ; Fabrication ; Fixed charges ; Inversion ; Inversion layer ; Inversion layers ; Junction photovoltage ; Measurement techniques ; Mobility ; Morphology ; Photovoltaic cells ; Photovoltaics ; Production lines ; Sheet resistance ; Silicon wafers ; Solar cells ; Surface charge ; Wafers</subject><ispartof>Solar energy materials and solar cells, 2020-12, Vol.218, p.110766, Article 110766</ispartof><rights>2020 Elsevier B.V.</rights><rights>Copyright Elsevier BV Dec 2020</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c283t-cdea60c244f9fe119e75dc43eaa27d3ca28b78a4248b66d2ea6bf1b1286464ec3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.solmat.2020.110766$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids></links><search><creatorcontrib>Korsós, Ferenc</creatorcontrib><creatorcontrib>László, Géza</creatorcontrib><creatorcontrib>Tüttő, Péter</creatorcontrib><creatorcontrib>Dubois, Sebastien</creatorcontrib><creatorcontrib>Enjalbert, Nicolas</creatorcontrib><creatorcontrib>Kis-Szabó, Krisztián</creatorcontrib><creatorcontrib>Tóth, Attila</creatorcontrib><title>Contactless measurement of sheet resistance and mobility of inversion charge carriers on photovoltaic wafers</title><title>Solar energy materials and solar cells</title><description>A new application of the differential junction photovoltage (diff-JPV) measurement technique is introduced. The technique's capability to determine the sheet resistance of charge carriers in inversion layers Rs,inv for silicon wafers coated by different dielectrics is investigated. The dielectrics - SiOx, SiNx and AlOx – used in this study are all highly relevant for photovoltaic applications, especially for inversion layer solar cell concepts.
The newly developed generalized measurement routine and evaluation utilizing the phase dependent surface potential signals of the diff-JPV sensor resulted in a very rapid Rs,inv extraction even in the very high (>10 kΩ/sq.) Rs,inv range which is typical for inversion layers.
However, reference inversion layer sheet resistance values can be hardly obtained without the fabrication of test devices. Thus, to validate the reliability of the diff-JPV measurement an indirect method is applied by measuring the mobility of the inversion charge carriers from the Rs,inv results after sequential surface corona charging steps.
A very sharp transition of the diff-JPV results is observed showing significant signal in the inversion regime exclusively and providing Rs,inv results in the expected range. The inversion charge carrier mobility data, calculated from the Rs,inv versus surface charge plots, are consistent and comparable to those found from device tests. Sheet resistance and mobility results exhibit high sensitivity to the surface morphology (i.e, textured versus polished), the interface quality and the amount of charge within the given dielectrics.
The contactless JPV is proven to be a fast and efficient way for the rapid characterization of inversion layers properties. It can even be accomplished in production lines in case of future industrialization of inversion layer based solar cell technologies.
•Differential JPV measurement is proven to provide contactless and reliable determination of sheet resistance of inversion charge carriers within 1 s.•Differential JPV technique detects and qualifies inversion layers induced by fixed charges within SiNx and AlOx layers.•Accurate sheet resistance test method for cell concepts utilizing inversion layers, e.g. inversion layer solar cells, applicable even in production lines.•Differential JPV combined with corona charging provides the contactless mobility measurement of inversion charge carriers without test device fabrication.•Contactless mobility results feature high sensitivity to interface quality and surface morphology but not influenced by fixed charges.</description><subject>Carrier mobility</subject><subject>Current carriers</subject><subject>Dielectrics</subject><subject>Electrical resistivity</subject><subject>Fabrication</subject><subject>Fixed charges</subject><subject>Inversion</subject><subject>Inversion layer</subject><subject>Inversion layers</subject><subject>Junction photovoltage</subject><subject>Measurement techniques</subject><subject>Mobility</subject><subject>Morphology</subject><subject>Photovoltaic cells</subject><subject>Photovoltaics</subject><subject>Production lines</subject><subject>Sheet resistance</subject><subject>Silicon wafers</subject><subject>Solar cells</subject><subject>Surface charge</subject><subject>Wafers</subject><issn>0927-0248</issn><issn>1879-3398</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNp9kE1LAzEQhoMoWKv_wEPA89Ykm2azF0GKX1Dwoucwm521KbubmqSV_ntT1rOngZdnZngfQm45W3DG1f12EX0_QFoIJnLEWaXUGZlxXdVFWdb6nMxYLaqCCakvyVWMW8aYUKWckX7lxwQ29RgjHRDiPuCAY6K-o3GDmGjA6GKC0SKFsaWDb1zv0vEEuPGAITo_UruB8IXUQgguRzRHu41P_uD7BM7SH-hyfE0uOugj3vzNOfl8fvpYvRbr95e31eO6sEKXqbAtgmJWSNnVHXJeY7VsrSwRQFRtaUHoptIgc5tGqVZkuul4w4VWUkm05ZzcTXd3wX_vMSaz9fsw5pdGZEKrZSVEpuRE2eBjDNiZXXADhKPhzJy8mq2ZvJqTVzN5zWsP0xrmBofc1kTrMOtpXUCbTOvd_wd-AXA9hfQ</recordid><startdate>202012</startdate><enddate>202012</enddate><creator>Korsós, Ferenc</creator><creator>László, Géza</creator><creator>Tüttő, Péter</creator><creator>Dubois, Sebastien</creator><creator>Enjalbert, Nicolas</creator><creator>Kis-Szabó, Krisztián</creator><creator>Tóth, Attila</creator><general>Elsevier B.V</general><general>Elsevier BV</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7ST</scope><scope>7TB</scope><scope>7U5</scope><scope>8FD</scope><scope>C1K</scope><scope>FR3</scope><scope>L7M</scope><scope>SOI</scope></search><sort><creationdate>202012</creationdate><title>Contactless measurement of sheet resistance and mobility of inversion charge carriers on photovoltaic wafers</title><author>Korsós, Ferenc ; László, Géza ; Tüttő, Péter ; Dubois, Sebastien ; Enjalbert, Nicolas ; Kis-Szabó, Krisztián ; Tóth, Attila</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c283t-cdea60c244f9fe119e75dc43eaa27d3ca28b78a4248b66d2ea6bf1b1286464ec3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Carrier mobility</topic><topic>Current carriers</topic><topic>Dielectrics</topic><topic>Electrical resistivity</topic><topic>Fabrication</topic><topic>Fixed charges</topic><topic>Inversion</topic><topic>Inversion layer</topic><topic>Inversion layers</topic><topic>Junction photovoltage</topic><topic>Measurement techniques</topic><topic>Mobility</topic><topic>Morphology</topic><topic>Photovoltaic cells</topic><topic>Photovoltaics</topic><topic>Production lines</topic><topic>Sheet resistance</topic><topic>Silicon wafers</topic><topic>Solar cells</topic><topic>Surface charge</topic><topic>Wafers</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Korsós, Ferenc</creatorcontrib><creatorcontrib>László, Géza</creatorcontrib><creatorcontrib>Tüttő, Péter</creatorcontrib><creatorcontrib>Dubois, Sebastien</creatorcontrib><creatorcontrib>Enjalbert, Nicolas</creatorcontrib><creatorcontrib>Kis-Szabó, Krisztián</creatorcontrib><creatorcontrib>Tóth, Attila</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Environment Abstracts</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Environmental Sciences and Pollution Management</collection><collection>Engineering Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Environment Abstracts</collection><jtitle>Solar energy materials and solar cells</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Korsós, Ferenc</au><au>László, Géza</au><au>Tüttő, Péter</au><au>Dubois, Sebastien</au><au>Enjalbert, Nicolas</au><au>Kis-Szabó, Krisztián</au><au>Tóth, Attila</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Contactless measurement of sheet resistance and mobility of inversion charge carriers on photovoltaic wafers</atitle><jtitle>Solar energy materials and solar cells</jtitle><date>2020-12</date><risdate>2020</risdate><volume>218</volume><spage>110766</spage><pages>110766-</pages><artnum>110766</artnum><issn>0927-0248</issn><eissn>1879-3398</eissn><abstract>A new application of the differential junction photovoltage (diff-JPV) measurement technique is introduced. The technique's capability to determine the sheet resistance of charge carriers in inversion layers Rs,inv for silicon wafers coated by different dielectrics is investigated. The dielectrics - SiOx, SiNx and AlOx – used in this study are all highly relevant for photovoltaic applications, especially for inversion layer solar cell concepts.
The newly developed generalized measurement routine and evaluation utilizing the phase dependent surface potential signals of the diff-JPV sensor resulted in a very rapid Rs,inv extraction even in the very high (>10 kΩ/sq.) Rs,inv range which is typical for inversion layers.
However, reference inversion layer sheet resistance values can be hardly obtained without the fabrication of test devices. Thus, to validate the reliability of the diff-JPV measurement an indirect method is applied by measuring the mobility of the inversion charge carriers from the Rs,inv results after sequential surface corona charging steps.
A very sharp transition of the diff-JPV results is observed showing significant signal in the inversion regime exclusively and providing Rs,inv results in the expected range. The inversion charge carrier mobility data, calculated from the Rs,inv versus surface charge plots, are consistent and comparable to those found from device tests. Sheet resistance and mobility results exhibit high sensitivity to the surface morphology (i.e, textured versus polished), the interface quality and the amount of charge within the given dielectrics.
The contactless JPV is proven to be a fast and efficient way for the rapid characterization of inversion layers properties. It can even be accomplished in production lines in case of future industrialization of inversion layer based solar cell technologies.
•Differential JPV measurement is proven to provide contactless and reliable determination of sheet resistance of inversion charge carriers within 1 s.•Differential JPV technique detects and qualifies inversion layers induced by fixed charges within SiNx and AlOx layers.•Accurate sheet resistance test method for cell concepts utilizing inversion layers, e.g. inversion layer solar cells, applicable even in production lines.•Differential JPV combined with corona charging provides the contactless mobility measurement of inversion charge carriers without test device fabrication.•Contactless mobility results feature high sensitivity to interface quality and surface morphology but not influenced by fixed charges.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.solmat.2020.110766</doi></addata></record> |
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subjects | Carrier mobility Current carriers Dielectrics Electrical resistivity Fabrication Fixed charges Inversion Inversion layer Inversion layers Junction photovoltage Measurement techniques Mobility Morphology Photovoltaic cells Photovoltaics Production lines Sheet resistance Silicon wafers Solar cells Surface charge Wafers |
title | Contactless measurement of sheet resistance and mobility of inversion charge carriers on photovoltaic wafers |
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