Effect of SiO2 capping layer on the ferroelectricity of Hf0.5Zr0.5O2 films

In this paper, SiO2 capping layers were introduced to improve the ferroelectric properties of Hf0.5Zr0.5O2 (HZO) thin films. HZO thin films with the SiO2 capping layers exhibit excellent ferroelectric characteristics. The largest remnant polarization (2Pr) was about 35.6 µC/cm2 for the HZO film with...

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Veröffentlicht in:	AIP advances 2020-11, Vol.10 (11), p.115320-115320-6
Hauptverfasser:	Zhai, Minglong, Sun, Bing, Huang, Kailiang, Chang, Hudong, Liu, Honggang
Format:	Artikel
Sprache:	eng
Schlagworte:	Capping Ferroelectric materials Ferroelectricity Oxygen content Polarization Silicon dioxide Thin films
Online-Zugang:	Volltext
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