Effect of the Field Oxidation Process on the Electrical Characteristics of 6500V 4H-SiC JBS Diodes

The effect of the field oxidation process on the electrical characteristics of 6500V 4H-SiC JBS diodes is studied. The oxide thickness and field plate length have an effect on the reverse breakdown voltage of the SiC JBS diode. According the simulation results, we choose the optimal thickness of the...

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Veröffentlicht in:	Materials science forum 2020-11, Vol.1014, p.144-148
Hauptverfasser:	Wu, Jun Min, Tian, Liang, Xia, Jing Hua, Yang, Fei, Jin, Rui, Sang, Ling
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemical vapor deposition Diodes Electric potential High temperature Leakage current Low pressure Oxidation Plasma enhanced chemical vapor deposition Thickness Voltage
Online-Zugang:	Volltext
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