Cu(In,Ga)Se2 thin film solar cells produced by atmospheric selenization of spray casted nanocrystalline layers
[Display omitted] •Atmospheric pressure selenization post-treatment of spray casted Cu(In,Ga)Se2 nanocrystal thin film is developed.•Effects of Selenization conditions & NaF doping are investigated.•Se pallets are used as source of Se vapor.•Al:ZnO/i:ZnO/CdS/CIGS/Mo/SLG devices were fabricated w...
Gespeichert in:
Veröffentlicht in: | Solar energy 2020-10, Vol.209, p.1-10 |
---|---|
Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | 10 |
---|---|
container_issue | |
container_start_page | 1 |
container_title | Solar energy |
container_volume | 209 |
creator | Badgujar, Amol C. Dusane, Rajiv O. Dhage, Sanjay R. |
description | [Display omitted]
•Atmospheric pressure selenization post-treatment of spray casted Cu(In,Ga)Se2 nanocrystal thin film is developed.•Effects of Selenization conditions & NaF doping are investigated.•Se pallets are used as source of Se vapor.•Al:ZnO/i:ZnO/CdS/CIGS/Mo/SLG devices were fabricated without toxic KCN etching.•Maximum power conversion efficiency of 6.7% is obtained.
Cu(In,Ga)Se2 (CIGS) is suitable absorber material for thin film photovoltaic owing to its excellent thermo-chemical stability and demonstration of high power conversion efficiency of 23.35% for lab-scale devices. The manufacturing of CIGS thin film solar cells need to be economical for commercially viability. Non-vacuum approach for the synthesis of the CIGS thin film absorber is desired for its cost-effective benefits over vacuum based processes. We report development of solution-processed CIGS absorber layer involving spraying of sonochemically prepared nanocrystal ink to obtain pristine CIGS nanocrystal layer, followed by single-step atmospheric pressure selenization utilizing Se pallets as a Se vapor source. Influence of selenization conditions and NaF doping on grain growth of the CIGS thin film absorber is studied in detail by structural, morphological, compositional and electrical characterization. Solar cells prepared under optimized conditions yielded a maximum efficiency of 6.7% without employing any thermal pre-treatment and toxic Potassium Cyanide etching. |
doi_str_mv | 10.1016/j.solener.2020.08.080 |
format | Article |
fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2460106669</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0038092X20309191</els_id><sourcerecordid>2460106669</sourcerecordid><originalsourceid>FETCH-LOGICAL-c337t-53220c1fe98865d2a9f8f1114cc81dc518dd725f08442ea4dfdbd411e176696a3</originalsourceid><addsrcrecordid>eNqFUMtKLDEQDXIF56qfIATceMEeq9KvzEougy8QXKjgLsSkghl6kjHpEdqvNzLuhQO1qPOoOoydIMwRsLtYzXMcKFCaCxAwB1kAe2yGTY8Virb_w2YAtaxgIV4O2N-cVwDYo-xnLCy3Z3fh_Eb_eyTBxzcfuPPDmhdHnbihYch8k6LdGrL8deJ6XMe8eaPkDc9UUv2nHn0MPDqeN0lP3Og8Fm7QIZo05VEPgw_EBz1Rykds3-kh0_HPPGTP11dPy9vq_uHmbvn_vjJ13Y9VWwsBBh0tpOxaK_TCSYeIjTESrWlRWtuL1oFsGkG6sc6-2gaRsO-6RafrQ3a68y23v28pj2oVtymUSCWaDhC6wiusdscyKeacyKlN8mudJoWgvqtVK_VTrfquVoEsgKK73OmovPDhyzYbT6FU5BOZUdnof3H4AtaXhhk</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2460106669</pqid></control><display><type>article</type><title>Cu(In,Ga)Se2 thin film solar cells produced by atmospheric selenization of spray casted nanocrystalline layers</title><source>Access via ScienceDirect (Elsevier)</source><creator>Badgujar, Amol C. ; Dusane, Rajiv O. ; Dhage, Sanjay R.</creator><creatorcontrib>Badgujar, Amol C. ; Dusane, Rajiv O. ; Dhage, Sanjay R.</creatorcontrib><description>[Display omitted]
•Atmospheric pressure selenization post-treatment of spray casted Cu(In,Ga)Se2 nanocrystal thin film is developed.•Effects of Selenization conditions & NaF doping are investigated.•Se pallets are used as source of Se vapor.•Al:ZnO/i:ZnO/CdS/CIGS/Mo/SLG devices were fabricated without toxic KCN etching.•Maximum power conversion efficiency of 6.7% is obtained.
Cu(In,Ga)Se2 (CIGS) is suitable absorber material for thin film photovoltaic owing to its excellent thermo-chemical stability and demonstration of high power conversion efficiency of 23.35% for lab-scale devices. The manufacturing of CIGS thin film solar cells need to be economical for commercially viability. Non-vacuum approach for the synthesis of the CIGS thin film absorber is desired for its cost-effective benefits over vacuum based processes. We report development of solution-processed CIGS absorber layer involving spraying of sonochemically prepared nanocrystal ink to obtain pristine CIGS nanocrystal layer, followed by single-step atmospheric pressure selenization utilizing Se pallets as a Se vapor source. Influence of selenization conditions and NaF doping on grain growth of the CIGS thin film absorber is studied in detail by structural, morphological, compositional and electrical characterization. Solar cells prepared under optimized conditions yielded a maximum efficiency of 6.7% without employing any thermal pre-treatment and toxic Potassium Cyanide etching.</description><identifier>ISSN: 0038-092X</identifier><identifier>EISSN: 1471-1257</identifier><identifier>DOI: 10.1016/j.solener.2020.08.080</identifier><language>eng</language><publisher>New York: Elsevier Ltd</publisher><subject>Absorbers (materials) ; Atmospheric ; CIGS ; Copper indium gallium selenides ; Electrical properties ; Energy conversion efficiency ; Etching ; Grain growth ; Heat treatment ; Morphology ; Nanocrystal ; Nanocrystals ; Pallets ; Photovoltaic cells ; Photovoltaics ; Potassium ; Potassium cyanide ; Pretreatment ; Selenium ; Selenization ; Solar cells ; Solar energy ; Spray ; Spraying ; Thin films ; Vacuum ; Vapor sources</subject><ispartof>Solar energy, 2020-10, Vol.209, p.1-10</ispartof><rights>2020 International Solar Energy Society</rights><rights>Copyright Pergamon Press Inc. Oct 2020</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c337t-53220c1fe98865d2a9f8f1114cc81dc518dd725f08442ea4dfdbd411e176696a3</citedby><cites>FETCH-LOGICAL-c337t-53220c1fe98865d2a9f8f1114cc81dc518dd725f08442ea4dfdbd411e176696a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.solener.2020.08.080$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids></links><search><creatorcontrib>Badgujar, Amol C.</creatorcontrib><creatorcontrib>Dusane, Rajiv O.</creatorcontrib><creatorcontrib>Dhage, Sanjay R.</creatorcontrib><title>Cu(In,Ga)Se2 thin film solar cells produced by atmospheric selenization of spray casted nanocrystalline layers</title><title>Solar energy</title><description>[Display omitted]
•Atmospheric pressure selenization post-treatment of spray casted Cu(In,Ga)Se2 nanocrystal thin film is developed.•Effects of Selenization conditions & NaF doping are investigated.•Se pallets are used as source of Se vapor.•Al:ZnO/i:ZnO/CdS/CIGS/Mo/SLG devices were fabricated without toxic KCN etching.•Maximum power conversion efficiency of 6.7% is obtained.
Cu(In,Ga)Se2 (CIGS) is suitable absorber material for thin film photovoltaic owing to its excellent thermo-chemical stability and demonstration of high power conversion efficiency of 23.35% for lab-scale devices. The manufacturing of CIGS thin film solar cells need to be economical for commercially viability. Non-vacuum approach for the synthesis of the CIGS thin film absorber is desired for its cost-effective benefits over vacuum based processes. We report development of solution-processed CIGS absorber layer involving spraying of sonochemically prepared nanocrystal ink to obtain pristine CIGS nanocrystal layer, followed by single-step atmospheric pressure selenization utilizing Se pallets as a Se vapor source. Influence of selenization conditions and NaF doping on grain growth of the CIGS thin film absorber is studied in detail by structural, morphological, compositional and electrical characterization. Solar cells prepared under optimized conditions yielded a maximum efficiency of 6.7% without employing any thermal pre-treatment and toxic Potassium Cyanide etching.</description><subject>Absorbers (materials)</subject><subject>Atmospheric</subject><subject>CIGS</subject><subject>Copper indium gallium selenides</subject><subject>Electrical properties</subject><subject>Energy conversion efficiency</subject><subject>Etching</subject><subject>Grain growth</subject><subject>Heat treatment</subject><subject>Morphology</subject><subject>Nanocrystal</subject><subject>Nanocrystals</subject><subject>Pallets</subject><subject>Photovoltaic cells</subject><subject>Photovoltaics</subject><subject>Potassium</subject><subject>Potassium cyanide</subject><subject>Pretreatment</subject><subject>Selenium</subject><subject>Selenization</subject><subject>Solar cells</subject><subject>Solar energy</subject><subject>Spray</subject><subject>Spraying</subject><subject>Thin films</subject><subject>Vacuum</subject><subject>Vapor sources</subject><issn>0038-092X</issn><issn>1471-1257</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNqFUMtKLDEQDXIF56qfIATceMEeq9KvzEougy8QXKjgLsSkghl6kjHpEdqvNzLuhQO1qPOoOoydIMwRsLtYzXMcKFCaCxAwB1kAe2yGTY8Virb_w2YAtaxgIV4O2N-cVwDYo-xnLCy3Z3fh_Eb_eyTBxzcfuPPDmhdHnbihYch8k6LdGrL8deJ6XMe8eaPkDc9UUv2nHn0MPDqeN0lP3Og8Fm7QIZo05VEPgw_EBz1Rykds3-kh0_HPPGTP11dPy9vq_uHmbvn_vjJ13Y9VWwsBBh0tpOxaK_TCSYeIjTESrWlRWtuL1oFsGkG6sc6-2gaRsO-6RafrQ3a68y23v28pj2oVtymUSCWaDhC6wiusdscyKeacyKlN8mudJoWgvqtVK_VTrfquVoEsgKK73OmovPDhyzYbT6FU5BOZUdnof3H4AtaXhhk</recordid><startdate>202010</startdate><enddate>202010</enddate><creator>Badgujar, Amol C.</creator><creator>Dusane, Rajiv O.</creator><creator>Dhage, Sanjay R.</creator><general>Elsevier Ltd</general><general>Pergamon Press Inc</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7ST</scope><scope>8FD</scope><scope>C1K</scope><scope>FR3</scope><scope>KR7</scope><scope>L7M</scope><scope>SOI</scope></search><sort><creationdate>202010</creationdate><title>Cu(In,Ga)Se2 thin film solar cells produced by atmospheric selenization of spray casted nanocrystalline layers</title><author>Badgujar, Amol C. ; Dusane, Rajiv O. ; Dhage, Sanjay R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c337t-53220c1fe98865d2a9f8f1114cc81dc518dd725f08442ea4dfdbd411e176696a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Absorbers (materials)</topic><topic>Atmospheric</topic><topic>CIGS</topic><topic>Copper indium gallium selenides</topic><topic>Electrical properties</topic><topic>Energy conversion efficiency</topic><topic>Etching</topic><topic>Grain growth</topic><topic>Heat treatment</topic><topic>Morphology</topic><topic>Nanocrystal</topic><topic>Nanocrystals</topic><topic>Pallets</topic><topic>Photovoltaic cells</topic><topic>Photovoltaics</topic><topic>Potassium</topic><topic>Potassium cyanide</topic><topic>Pretreatment</topic><topic>Selenium</topic><topic>Selenization</topic><topic>Solar cells</topic><topic>Solar energy</topic><topic>Spray</topic><topic>Spraying</topic><topic>Thin films</topic><topic>Vacuum</topic><topic>Vapor sources</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Badgujar, Amol C.</creatorcontrib><creatorcontrib>Dusane, Rajiv O.</creatorcontrib><creatorcontrib>Dhage, Sanjay R.</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Environment Abstracts</collection><collection>Technology Research Database</collection><collection>Environmental Sciences and Pollution Management</collection><collection>Engineering Research Database</collection><collection>Civil Engineering Abstracts</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Environment Abstracts</collection><jtitle>Solar energy</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Badgujar, Amol C.</au><au>Dusane, Rajiv O.</au><au>Dhage, Sanjay R.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Cu(In,Ga)Se2 thin film solar cells produced by atmospheric selenization of spray casted nanocrystalline layers</atitle><jtitle>Solar energy</jtitle><date>2020-10</date><risdate>2020</risdate><volume>209</volume><spage>1</spage><epage>10</epage><pages>1-10</pages><issn>0038-092X</issn><eissn>1471-1257</eissn><abstract>[Display omitted]
•Atmospheric pressure selenization post-treatment of spray casted Cu(In,Ga)Se2 nanocrystal thin film is developed.•Effects of Selenization conditions & NaF doping are investigated.•Se pallets are used as source of Se vapor.•Al:ZnO/i:ZnO/CdS/CIGS/Mo/SLG devices were fabricated without toxic KCN etching.•Maximum power conversion efficiency of 6.7% is obtained.
Cu(In,Ga)Se2 (CIGS) is suitable absorber material for thin film photovoltaic owing to its excellent thermo-chemical stability and demonstration of high power conversion efficiency of 23.35% for lab-scale devices. The manufacturing of CIGS thin film solar cells need to be economical for commercially viability. Non-vacuum approach for the synthesis of the CIGS thin film absorber is desired for its cost-effective benefits over vacuum based processes. We report development of solution-processed CIGS absorber layer involving spraying of sonochemically prepared nanocrystal ink to obtain pristine CIGS nanocrystal layer, followed by single-step atmospheric pressure selenization utilizing Se pallets as a Se vapor source. Influence of selenization conditions and NaF doping on grain growth of the CIGS thin film absorber is studied in detail by structural, morphological, compositional and electrical characterization. Solar cells prepared under optimized conditions yielded a maximum efficiency of 6.7% without employing any thermal pre-treatment and toxic Potassium Cyanide etching.</abstract><cop>New York</cop><pub>Elsevier Ltd</pub><doi>10.1016/j.solener.2020.08.080</doi><tpages>10</tpages></addata></record> |
fulltext | fulltext |
identifier | ISSN: 0038-092X |
ispartof | Solar energy, 2020-10, Vol.209, p.1-10 |
issn | 0038-092X 1471-1257 |
language | eng |
recordid | cdi_proquest_journals_2460106669 |
source | Access via ScienceDirect (Elsevier) |
subjects | Absorbers (materials) Atmospheric CIGS Copper indium gallium selenides Electrical properties Energy conversion efficiency Etching Grain growth Heat treatment Morphology Nanocrystal Nanocrystals Pallets Photovoltaic cells Photovoltaics Potassium Potassium cyanide Pretreatment Selenium Selenization Solar cells Solar energy Spray Spraying Thin films Vacuum Vapor sources |
title | Cu(In,Ga)Se2 thin film solar cells produced by atmospheric selenization of spray casted nanocrystalline layers |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-22T20%3A36%3A43IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Cu(In,Ga)Se2%20thin%20film%20solar%20cells%20produced%20by%20atmospheric%20selenization%20of%20spray%20casted%20nanocrystalline%20layers&rft.jtitle=Solar%20energy&rft.au=Badgujar,%20Amol%20C.&rft.date=2020-10&rft.volume=209&rft.spage=1&rft.epage=10&rft.pages=1-10&rft.issn=0038-092X&rft.eissn=1471-1257&rft_id=info:doi/10.1016/j.solener.2020.08.080&rft_dat=%3Cproquest_cross%3E2460106669%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2460106669&rft_id=info:pmid/&rft_els_id=S0038092X20309191&rfr_iscdi=true |