Enhancement of electron selectivity of Si/TiO2 heterojunction via oxygen vacancies for carrier selective solar cell application
Titanium dioxide is widely used as an electron selective layer for silicon based carrier selective solar cells. For efficient carrier collection, the TiO2 film should passivate the Si surface, while maintaining its selective nature – which requires careful optimization of process conditions. Here, w...
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| creator | Bhatia, Swasti Nair, Pradeep R. Antony, Aldrin |
| description | Titanium dioxide is widely used as an electron selective layer for silicon based carrier selective solar cells. For efficient carrier collection, the TiO2 film should passivate the Si surface, while maintaining its selective nature – which requires careful optimization of process conditions. Here, we compare the properties of TiO2 films deposited by plasma and thermal Atomic Layer Deposition (ALD). We observe that the films deposited without plasma are indeed more oxygen deficient, but interestingly provide better passivation of the silicon surface as compared to plasma assisted deposition process and have better electrical performance. |
| doi_str_mv | 10.1063/5.0023199 |
| format | Conference Proceeding |
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We observe that the films deposited without plasma are indeed more oxygen deficient, but interestingly provide better passivation of the silicon surface as compared to plasma assisted deposition process and have better electrical performance.</description><subject>Atomic layer epitaxy</subject><subject>Heterojunctions</subject><subject>Optimization</subject><subject>Photovoltaic cells</subject><subject>Selectivity</subject><subject>Silicon</subject><subject>Solar cells</subject><subject>Titanium dioxide</subject><issn>0094-243X</issn><issn>1551-7616</issn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2020</creationdate><recordtype>conference_proceeding</recordtype><recordid>eNp9kE1LAzEQhoMoWKsH_0HAm7BtPja73aMUv6DQgxW8hWk6sSnbzZpsiz35101r0ZunGWYenhleQq45G3BWyKEaMCYkr6oT0uNK8awseHFKeoxVeSZy-XZOLmJcJagqy1GPfN03S2gMrrHpqLcUazRd8A2Nh85tXbfbz1_ccOamgi6xw-BXmybtErV1QP3n7h1TCyaJHEZqfaAGQnAYfjVIo68hzbGuKbRt7QzsDZfkzEId8epY--T14X42fsom08fn8d0ka4WSXaaqYgEMWG5KXkjFDZRzU6ABK-cLyEdCWZsADpCj4CkAYAztqMgFR7CMyz65-fG2wX9sMHZ65TehSSe1yFWKImnLRN3-UNG47vCfboNbQ9hpzvQ-YK30MeD_4K0Pf6BuF1Z-AxAqfsU</recordid><startdate>20201105</startdate><enddate>20201105</enddate><creator>Bhatia, Swasti</creator><creator>Nair, Pradeep R.</creator><creator>Antony, Aldrin</creator><general>American Institute of Physics</general><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20201105</creationdate><title>Enhancement of electron selectivity of Si/TiO2 heterojunction via oxygen vacancies for carrier selective solar cell application</title><author>Bhatia, Swasti ; Nair, Pradeep R. ; Antony, Aldrin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p253t-596da0a04c716351ca7bc6ecaf3bda4825ffda01aa4e21231a00ef86421eaf013</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Atomic layer epitaxy</topic><topic>Heterojunctions</topic><topic>Optimization</topic><topic>Photovoltaic cells</topic><topic>Selectivity</topic><topic>Silicon</topic><topic>Solar cells</topic><topic>Titanium dioxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Bhatia, Swasti</creatorcontrib><creatorcontrib>Nair, Pradeep R.</creatorcontrib><creatorcontrib>Antony, Aldrin</creatorcontrib><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Bhatia, Swasti</au><au>Nair, Pradeep R.</au><au>Antony, Aldrin</au><au>Yusuf, S. M.</au><au>Sharma, Veerendra K.</au><au>Prajapat, C. L.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Enhancement of electron selectivity of Si/TiO2 heterojunction via oxygen vacancies for carrier selective solar cell application</atitle><btitle>AIP conference proceedings</btitle><date>2020-11-05</date><risdate>2020</risdate><volume>2265</volume><issue>1</issue><issn>0094-243X</issn><eissn>1551-7616</eissn><coden>APCPCS</coden><abstract>Titanium dioxide is widely used as an electron selective layer for silicon based carrier selective solar cells. For efficient carrier collection, the TiO2 film should passivate the Si surface, while maintaining its selective nature – which requires careful optimization of process conditions. Here, we compare the properties of TiO2 films deposited by plasma and thermal Atomic Layer Deposition (ALD). We observe that the films deposited without plasma are indeed more oxygen deficient, but interestingly provide better passivation of the silicon surface as compared to plasma assisted deposition process and have better electrical performance.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0023199</doi><tpages>4</tpages></addata></record> |
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| subjects | Atomic layer epitaxy Heterojunctions Optimization Photovoltaic cells Selectivity Silicon Solar cells Titanium dioxide |
| title | Enhancement of electron selectivity of Si/TiO2 heterojunction via oxygen vacancies for carrier selective solar cell application |
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