Influence of annealing on boron diffusion from obliquely sputtered Co60Fe20B20 thin films

We report controlled effect of Boron diffusion on annealing of Co60Fe20B20 (CoFeB) thin films grown on SiO2/Si(100) substrates using pulsed dc magnetron sputtering. X-ray diffraction studies indicated that the crystallization of CoFeB is achieved above 100°C via the formation of bcc CoFe with (110)...

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Bibliographische Detailangaben

Hauptverfasser:	Gupta, Nanhe Kumar, Barwal, Vineet, Husain, Sajid, Pandey, Lalit, Hait, Soumyarup, Mishra, Vireshwar, Chaudhary, Sujeet
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Annealing Boron Coercivity Crystallization Damping Diffusion annealing Diffusion effects Magnetic saturation Magnetron sputtering Preferred orientation Silicon dioxide Silicon substrates Spintronics Thin films
Online-Zugang:	Volltext
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