Investigation of Photo-Initiators for Ultra-Violet Light Cured Polysilsesquioxane Gate Dielectric Layers of Organic Thin Film Transistors

We fabricated pentacene thin-film transistors (TFTs) with ultra-violet (UV) light cured polysilsesquioxane (PSQ) gate dielectric layers using different photo-initiators to reduce UV-curing time. When PSQ layers were cured using IrgacureTM 184 as a photo-initiator, it took 60 minutes to cure them com...

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Veröffentlicht in:	Journal of the Society of Materials Science, Japan Japan, 2020/10/15, Vol.69(10), pp.712-716
Hauptverfasser:	HATANO, Kosuke, NAKAHARA, Yoshio, UNO, Kazuyuki, TANAKA, Ichiro
Format:	Artikel
Sprache:	jpn
Schlagworte:	Curing Hole mobility Initiators Polysilsesquioxane, Gate dielectric, Pentacene, Thin film transistors, UV-light curing, photo-initiator, hole mobility Polysilsesquioxanes Semiconductor devices Silicon Thin film transistors Transistors Ultraviolet radiation
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