Investigation of Photo-Initiators for Ultra-Violet Light Cured Polysilsesquioxane Gate Dielectric Layers of Organic Thin Film Transistors
We fabricated pentacene thin-film transistors (TFTs) with ultra-violet (UV) light cured polysilsesquioxane (PSQ) gate dielectric layers using different photo-initiators to reduce UV-curing time. When PSQ layers were cured using IrgacureTM 184 as a photo-initiator, it took 60 minutes to cure them com...
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| Veröffentlicht in: | Journal of the Society of Materials Science, Japan Japan, 2020/10/15, Vol.69(10), pp.712-716 |
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| container_end_page | 716 |
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| container_issue | 10 |
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| container_title | Journal of the Society of Materials Science, Japan |
| container_volume | 69 |
| creator | HATANO, Kosuke NAKAHARA, Yoshio UNO, Kazuyuki TANAKA, Ichiro |
| description | We fabricated pentacene thin-film transistors (TFTs) with ultra-violet (UV) light cured polysilsesquioxane (PSQ) gate dielectric layers using different photo-initiators to reduce UV-curing time. When PSQ layers were cured using IrgacureTM 184 as a photo-initiator, it took 60 minutes to cure them completely. However, the curing time was reduced to be 10 minutes when IrgacureTM 907 was used with a sensitizer because the UV light was absorbed more efficiently. It was also demonstrated that the hole mobility of the pentacene TFTs was not affected by changing the photo-initiator from IrgacureTM 184 to IrgacureTM 907 with a sensitizer. |
| doi_str_mv | 10.2472/jsms.69.712 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2457274331</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2457274331</sourcerecordid><originalsourceid>FETCH-LOGICAL-c190t-4a25abf4286507e9297930876b76b976f55c9b9a164759469ef677c0b35dd50d3</originalsourceid><addsrcrecordid>eNo9kN1qAjEQhUNpodJ61RcI9LKsTbL52VyVYqsVBL3Q3obsmtXImtgklvoIfetGLMLAwMw35zAHgAeMBoQK8ryNuzjgciAwuQI9XFWoELSqrkEPMUwLhnl5C_ox2hohQkhZUdkDvxP3bWKya52sd9C3cL7xyRcTZ5PVyYcIWx_gsktBF5_WdybBqV1vEhweglnBue-O0XbRxK-D9T_aGTjWycA3azrTpGAbONVHk2Wy9CystcuTxcY6OLLdDi6CdtHGk889uGl1Fur_9zuwHL0vhh_FdDaeDF-nRYMlSgXVhOm6paTiDAkjiRSyRJXgdS4peMtYI2upMaeCScqlabkQDapLtloxtCrvwONZdx_81yH_rrb-EFy2VIQyQQQtS5yppzPVBB9jMK3aB7vT4agwUqe41SluxaXKcWf65UxvY9Jrc2F1SLbpzIXNt-eLy6bZ6KCMK_8AtA-L-g</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2457274331</pqid></control><display><type>article</type><title>Investigation of Photo-Initiators for Ultra-Violet Light Cured Polysilsesquioxane Gate Dielectric Layers of Organic Thin Film Transistors</title><source>Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals</source><source>J-STAGE (Japan Science & Technology Information Aggregator, Electronic) Freely Available Titles - Japanese</source><creator>HATANO, Kosuke ; NAKAHARA, Yoshio ; UNO, Kazuyuki ; TANAKA, Ichiro</creator><creatorcontrib>HATANO, Kosuke ; NAKAHARA, Yoshio ; UNO, Kazuyuki ; TANAKA, Ichiro</creatorcontrib><description>We fabricated pentacene thin-film transistors (TFTs) with ultra-violet (UV) light cured polysilsesquioxane (PSQ) gate dielectric layers using different photo-initiators to reduce UV-curing time. When PSQ layers were cured using IrgacureTM 184 as a photo-initiator, it took 60 minutes to cure them completely. However, the curing time was reduced to be 10 minutes when IrgacureTM 907 was used with a sensitizer because the UV light was absorbed more efficiently. It was also demonstrated that the hole mobility of the pentacene TFTs was not affected by changing the photo-initiator from IrgacureTM 184 to IrgacureTM 907 with a sensitizer.</description><identifier>ISSN: 0514-5163</identifier><identifier>EISSN: 1880-7488</identifier><identifier>DOI: 10.2472/jsms.69.712</identifier><language>jpn</language><publisher>Kyoto: The Society of Materials Science, Japan</publisher><subject>Curing ; Hole mobility ; Initiators ; Polysilsesquioxane, Gate dielectric, Pentacene, Thin film transistors, UV-light curing, photo-initiator, hole mobility ; Polysilsesquioxanes ; Semiconductor devices ; Silicon ; Thin film transistors ; Transistors ; Ultraviolet radiation</subject><ispartof>Journal of the Society of Materials Science, Japan, 2020/10/15, Vol.69(10), pp.712-716</ispartof><rights>2020 by The Society of Materials Science, Japan</rights><rights>Copyright Japan Science and Technology Agency 2020</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c190t-4a25abf4286507e9297930876b76b976f55c9b9a164759469ef677c0b35dd50d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,1876,27903,27904</link.rule.ids></links><search><creatorcontrib>HATANO, Kosuke</creatorcontrib><creatorcontrib>NAKAHARA, Yoshio</creatorcontrib><creatorcontrib>UNO, Kazuyuki</creatorcontrib><creatorcontrib>TANAKA, Ichiro</creatorcontrib><title>Investigation of Photo-Initiators for Ultra-Violet Light Cured Polysilsesquioxane Gate Dielectric Layers of Organic Thin Film Transistors</title><title>Journal of the Society of Materials Science, Japan</title><addtitle>J. Soc. Mat. Sci., Japan</addtitle><description>We fabricated pentacene thin-film transistors (TFTs) with ultra-violet (UV) light cured polysilsesquioxane (PSQ) gate dielectric layers using different photo-initiators to reduce UV-curing time. When PSQ layers were cured using IrgacureTM 184 as a photo-initiator, it took 60 minutes to cure them completely. However, the curing time was reduced to be 10 minutes when IrgacureTM 907 was used with a sensitizer because the UV light was absorbed more efficiently. It was also demonstrated that the hole mobility of the pentacene TFTs was not affected by changing the photo-initiator from IrgacureTM 184 to IrgacureTM 907 with a sensitizer.</description><subject>Curing</subject><subject>Hole mobility</subject><subject>Initiators</subject><subject>Polysilsesquioxane, Gate dielectric, Pentacene, Thin film transistors, UV-light curing, photo-initiator, hole mobility</subject><subject>Polysilsesquioxanes</subject><subject>Semiconductor devices</subject><subject>Silicon</subject><subject>Thin film transistors</subject><subject>Transistors</subject><subject>Ultraviolet radiation</subject><issn>0514-5163</issn><issn>1880-7488</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNo9kN1qAjEQhUNpodJ61RcI9LKsTbL52VyVYqsVBL3Q3obsmtXImtgklvoIfetGLMLAwMw35zAHgAeMBoQK8ryNuzjgciAwuQI9XFWoELSqrkEPMUwLhnl5C_ox2hohQkhZUdkDvxP3bWKya52sd9C3cL7xyRcTZ5PVyYcIWx_gsktBF5_WdybBqV1vEhweglnBue-O0XbRxK-D9T_aGTjWycA3azrTpGAbONVHk2Wy9CystcuTxcY6OLLdDi6CdtHGk889uGl1Fur_9zuwHL0vhh_FdDaeDF-nRYMlSgXVhOm6paTiDAkjiRSyRJXgdS4peMtYI2upMaeCScqlabkQDapLtloxtCrvwONZdx_81yH_rrb-EFy2VIQyQQQtS5yppzPVBB9jMK3aB7vT4agwUqe41SluxaXKcWf65UxvY9Jrc2F1SLbpzIXNt-eLy6bZ6KCMK_8AtA-L-g</recordid><startdate>20201015</startdate><enddate>20201015</enddate><creator>HATANO, Kosuke</creator><creator>NAKAHARA, Yoshio</creator><creator>UNO, Kazuyuki</creator><creator>TANAKA, Ichiro</creator><general>The Society of Materials Science, Japan</general><general>Japan Science and Technology Agency</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20201015</creationdate><title>Investigation of Photo-Initiators for Ultra-Violet Light Cured Polysilsesquioxane Gate Dielectric Layers of Organic Thin Film Transistors</title><author>HATANO, Kosuke ; NAKAHARA, Yoshio ; UNO, Kazuyuki ; TANAKA, Ichiro</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c190t-4a25abf4286507e9297930876b76b976f55c9b9a164759469ef677c0b35dd50d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>jpn</language><creationdate>2020</creationdate><topic>Curing</topic><topic>Hole mobility</topic><topic>Initiators</topic><topic>Polysilsesquioxane, Gate dielectric, Pentacene, Thin film transistors, UV-light curing, photo-initiator, hole mobility</topic><topic>Polysilsesquioxanes</topic><topic>Semiconductor devices</topic><topic>Silicon</topic><topic>Thin film transistors</topic><topic>Transistors</topic><topic>Ultraviolet radiation</topic><toplevel>online_resources</toplevel><creatorcontrib>HATANO, Kosuke</creatorcontrib><creatorcontrib>NAKAHARA, Yoshio</creatorcontrib><creatorcontrib>UNO, Kazuyuki</creatorcontrib><creatorcontrib>TANAKA, Ichiro</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Journal of the Society of Materials Science, Japan</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>HATANO, Kosuke</au><au>NAKAHARA, Yoshio</au><au>UNO, Kazuyuki</au><au>TANAKA, Ichiro</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Investigation of Photo-Initiators for Ultra-Violet Light Cured Polysilsesquioxane Gate Dielectric Layers of Organic Thin Film Transistors</atitle><jtitle>Journal of the Society of Materials Science, Japan</jtitle><addtitle>J. Soc. Mat. Sci., Japan</addtitle><date>2020-10-15</date><risdate>2020</risdate><volume>69</volume><issue>10</issue><spage>712</spage><epage>716</epage><pages>712-716</pages><issn>0514-5163</issn><eissn>1880-7488</eissn><abstract>We fabricated pentacene thin-film transistors (TFTs) with ultra-violet (UV) light cured polysilsesquioxane (PSQ) gate dielectric layers using different photo-initiators to reduce UV-curing time. When PSQ layers were cured using IrgacureTM 184 as a photo-initiator, it took 60 minutes to cure them completely. However, the curing time was reduced to be 10 minutes when IrgacureTM 907 was used with a sensitizer because the UV light was absorbed more efficiently. It was also demonstrated that the hole mobility of the pentacene TFTs was not affected by changing the photo-initiator from IrgacureTM 184 to IrgacureTM 907 with a sensitizer.</abstract><cop>Kyoto</cop><pub>The Society of Materials Science, Japan</pub><doi>10.2472/jsms.69.712</doi><tpages>5</tpages><oa>free_for_read</oa></addata></record> |
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| ispartof | Journal of the Society of Materials Science, Japan, 2020/10/15, Vol.69(10), pp.712-716 |
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| source | Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals; J-STAGE (Japan Science & Technology Information Aggregator, Electronic) Freely Available Titles - Japanese |
| subjects | Curing Hole mobility Initiators Polysilsesquioxane, Gate dielectric, Pentacene, Thin film transistors, UV-light curing, photo-initiator, hole mobility Polysilsesquioxanes Semiconductor devices Silicon Thin film transistors Transistors Ultraviolet radiation |
| title | Investigation of Photo-Initiators for Ultra-Violet Light Cured Polysilsesquioxane Gate Dielectric Layers of Organic Thin Film Transistors |
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