Structural, morphological and 1/f noise properties of ITO/TiO2 thin films by e-beam evaporation system for optoelectronic device applications
In the present research study, ITO/TiO2 thin films were prepared on a glass substrate by using an electron beam (e-beam) evaporation system at different annealing temperatures (300, 350, 400 and 450 °C). The amorphous and crystalline natures of ITO/TiO2 structure were analyzed by X-ray diffraction s...
Gespeichert in:
Hauptverfasser: | , , , , , , |
---|---|
Format: | Tagungsbericht |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | 1 |
container_start_page | |
container_title | |
container_volume | 2280 |
creator | Manjunath, V. Sowmya, D. V. Achari, K. Murali Mohan Sandhya, P. Sravya, G. Ananda, P. Krishnaiah, M. |
description | In the present research study, ITO/TiO2 thin films were prepared on a glass substrate by using an electron beam (e-beam) evaporation system at different annealing temperatures (300, 350, 400 and 450 °C). The amorphous and crystalline natures of ITO/TiO2 structure were analyzed by X-ray diffraction study. As the grain size becomes larger, indirectly it will develop the crystalline quality of the TiO2 films studied from AFM. The surface of TiO2 films and the crystalline size of the sample were increased gradually with respect to a temperature that is observed in SEM. The elemental composition determined by the energy dispersive analysis of EDAX showed that TiO2 thin films were highly stoichiometric. Further, the higher optical transmittance (∼93%) was obtained with 450 °C annealed ITO/ TiO2 film. The optical band gap increased along with annealing temperatures (300, 350, 400 and 450 °C). All the above results of this present work can be utilized for solar cell and optoelectronic device applications. |
doi_str_mv | 10.1063/5.0018120 |
format | Conference Proceeding |
fullrecord | <record><control><sourceid>proquest_scita</sourceid><recordid>TN_cdi_proquest_journals_2455628887</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2455628887</sourcerecordid><originalsourceid>FETCH-LOGICAL-p183t-fb49b1f05d3dfc1c9056d1bf63f49d03ad7bae6bce795a684ace2b31e419a9943</originalsourceid><addsrcrecordid>eNp90E1LxDAQBuAgCq4fB__BgDexbtI0bXOUxS9Y2IMreCtpOtFI28Qku7A_wv_s6i548zSXh3lnXkIuGL1htORTcUMpq1lOD8iECcGyqmTlIZlQKossL_jrMTmJ8YPSXFZVPSFfzymsdFoF1V_D4IJ_d717s1r1oMYO2NTA6GxE8MF5DMliBGfgabmYLu0ih_RuRzC2HyK0G8CsRTUArpV3QSXrRoibmHAA4wI4nxz2qFNwo9XQ4dpqBOV9v837wfGMHBnVRzzfz1Pycn-3nD1m88XD0-x2nnlW85SZtpAtM1R0vDOaaUlF2bHWlNwUsqNcdVWrsGw1VlKosi6UxrzlDAsmlZQFPyWXu73brz5XGFPz4VZh3EY2eSFEmdd1XW3V1U5FbdPvgY0PdlBh0zDa_NTdiGZf93947cIfbHxn-DdMDYOA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype><pqid>2455628887</pqid></control><display><type>conference_proceeding</type><title>Structural, morphological and 1/f noise properties of ITO/TiO2 thin films by e-beam evaporation system for optoelectronic device applications</title><source>American Institute of Physics (AIP) Journals</source><creator>Manjunath, V. ; Sowmya, D. V. ; Achari, K. Murali Mohan ; Sandhya, P. ; Sravya, G. ; Ananda, P. ; Krishnaiah, M.</creator><contributor>Zyryanov, Grigory V ; Santra, Sougata ; Sadieva, Leila K</contributor><creatorcontrib>Manjunath, V. ; Sowmya, D. V. ; Achari, K. Murali Mohan ; Sandhya, P. ; Sravya, G. ; Ananda, P. ; Krishnaiah, M. ; Zyryanov, Grigory V ; Santra, Sougata ; Sadieva, Leila K</creatorcontrib><description>In the present research study, ITO/TiO2 thin films were prepared on a glass substrate by using an electron beam (e-beam) evaporation system at different annealing temperatures (300, 350, 400 and 450 °C). The amorphous and crystalline natures of ITO/TiO2 structure were analyzed by X-ray diffraction study. As the grain size becomes larger, indirectly it will develop the crystalline quality of the TiO2 films studied from AFM. The surface of TiO2 films and the crystalline size of the sample were increased gradually with respect to a temperature that is observed in SEM. The elemental composition determined by the energy dispersive analysis of EDAX showed that TiO2 thin films were highly stoichiometric. Further, the higher optical transmittance (∼93%) was obtained with 450 °C annealed ITO/ TiO2 film. The optical band gap increased along with annealing temperatures (300, 350, 400 and 450 °C). All the above results of this present work can be utilized for solar cell and optoelectronic device applications.</description><identifier>ISSN: 0094-243X</identifier><identifier>EISSN: 1551-7616</identifier><identifier>DOI: 10.1063/5.0018120</identifier><identifier>CODEN: APCPCS</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Annealing ; Crystal structure ; Crystallinity ; Electron beams ; Evaporation ; Glass substrates ; Grain size ; Optoelectronic devices ; Photovoltaic cells ; Solar cells ; Thin films ; Titanium dioxide</subject><ispartof>AIP conference proceedings, 2020, Vol.2280 (1)</ispartof><rights>Author(s)</rights><rights>2020 Author(s). Published by AIP Publishing.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/acp/article-lookup/doi/10.1063/5.0018120$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>309,310,314,776,780,785,786,790,4498,23909,23910,25118,27901,27902,76127</link.rule.ids></links><search><contributor>Zyryanov, Grigory V</contributor><contributor>Santra, Sougata</contributor><contributor>Sadieva, Leila K</contributor><creatorcontrib>Manjunath, V.</creatorcontrib><creatorcontrib>Sowmya, D. V.</creatorcontrib><creatorcontrib>Achari, K. Murali Mohan</creatorcontrib><creatorcontrib>Sandhya, P.</creatorcontrib><creatorcontrib>Sravya, G.</creatorcontrib><creatorcontrib>Ananda, P.</creatorcontrib><creatorcontrib>Krishnaiah, M.</creatorcontrib><title>Structural, morphological and 1/f noise properties of ITO/TiO2 thin films by e-beam evaporation system for optoelectronic device applications</title><title>AIP conference proceedings</title><description>In the present research study, ITO/TiO2 thin films were prepared on a glass substrate by using an electron beam (e-beam) evaporation system at different annealing temperatures (300, 350, 400 and 450 °C). The amorphous and crystalline natures of ITO/TiO2 structure were analyzed by X-ray diffraction study. As the grain size becomes larger, indirectly it will develop the crystalline quality of the TiO2 films studied from AFM. The surface of TiO2 films and the crystalline size of the sample were increased gradually with respect to a temperature that is observed in SEM. The elemental composition determined by the energy dispersive analysis of EDAX showed that TiO2 thin films were highly stoichiometric. Further, the higher optical transmittance (∼93%) was obtained with 450 °C annealed ITO/ TiO2 film. The optical band gap increased along with annealing temperatures (300, 350, 400 and 450 °C). All the above results of this present work can be utilized for solar cell and optoelectronic device applications.</description><subject>Annealing</subject><subject>Crystal structure</subject><subject>Crystallinity</subject><subject>Electron beams</subject><subject>Evaporation</subject><subject>Glass substrates</subject><subject>Grain size</subject><subject>Optoelectronic devices</subject><subject>Photovoltaic cells</subject><subject>Solar cells</subject><subject>Thin films</subject><subject>Titanium dioxide</subject><issn>0094-243X</issn><issn>1551-7616</issn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2020</creationdate><recordtype>conference_proceeding</recordtype><recordid>eNp90E1LxDAQBuAgCq4fB__BgDexbtI0bXOUxS9Y2IMreCtpOtFI28Qku7A_wv_s6i548zSXh3lnXkIuGL1htORTcUMpq1lOD8iECcGyqmTlIZlQKossL_jrMTmJ8YPSXFZVPSFfzymsdFoF1V_D4IJ_d717s1r1oMYO2NTA6GxE8MF5DMliBGfgabmYLu0ih_RuRzC2HyK0G8CsRTUArpV3QSXrRoibmHAA4wI4nxz2qFNwo9XQ4dpqBOV9v837wfGMHBnVRzzfz1Pycn-3nD1m88XD0-x2nnlW85SZtpAtM1R0vDOaaUlF2bHWlNwUsqNcdVWrsGw1VlKosi6UxrzlDAsmlZQFPyWXu73brz5XGFPz4VZh3EY2eSFEmdd1XW3V1U5FbdPvgY0PdlBh0zDa_NTdiGZf93947cIfbHxn-DdMDYOA</recordid><startdate>20201104</startdate><enddate>20201104</enddate><creator>Manjunath, V.</creator><creator>Sowmya, D. V.</creator><creator>Achari, K. Murali Mohan</creator><creator>Sandhya, P.</creator><creator>Sravya, G.</creator><creator>Ananda, P.</creator><creator>Krishnaiah, M.</creator><general>American Institute of Physics</general><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20201104</creationdate><title>Structural, morphological and 1/f noise properties of ITO/TiO2 thin films by e-beam evaporation system for optoelectronic device applications</title><author>Manjunath, V. ; Sowmya, D. V. ; Achari, K. Murali Mohan ; Sandhya, P. ; Sravya, G. ; Ananda, P. ; Krishnaiah, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p183t-fb49b1f05d3dfc1c9056d1bf63f49d03ad7bae6bce795a684ace2b31e419a9943</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Annealing</topic><topic>Crystal structure</topic><topic>Crystallinity</topic><topic>Electron beams</topic><topic>Evaporation</topic><topic>Glass substrates</topic><topic>Grain size</topic><topic>Optoelectronic devices</topic><topic>Photovoltaic cells</topic><topic>Solar cells</topic><topic>Thin films</topic><topic>Titanium dioxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Manjunath, V.</creatorcontrib><creatorcontrib>Sowmya, D. V.</creatorcontrib><creatorcontrib>Achari, K. Murali Mohan</creatorcontrib><creatorcontrib>Sandhya, P.</creatorcontrib><creatorcontrib>Sravya, G.</creatorcontrib><creatorcontrib>Ananda, P.</creatorcontrib><creatorcontrib>Krishnaiah, M.</creatorcontrib><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Manjunath, V.</au><au>Sowmya, D. V.</au><au>Achari, K. Murali Mohan</au><au>Sandhya, P.</au><au>Sravya, G.</au><au>Ananda, P.</au><au>Krishnaiah, M.</au><au>Zyryanov, Grigory V</au><au>Santra, Sougata</au><au>Sadieva, Leila K</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Structural, morphological and 1/f noise properties of ITO/TiO2 thin films by e-beam evaporation system for optoelectronic device applications</atitle><btitle>AIP conference proceedings</btitle><date>2020-11-04</date><risdate>2020</risdate><volume>2280</volume><issue>1</issue><issn>0094-243X</issn><eissn>1551-7616</eissn><coden>APCPCS</coden><abstract>In the present research study, ITO/TiO2 thin films were prepared on a glass substrate by using an electron beam (e-beam) evaporation system at different annealing temperatures (300, 350, 400 and 450 °C). The amorphous and crystalline natures of ITO/TiO2 structure were analyzed by X-ray diffraction study. As the grain size becomes larger, indirectly it will develop the crystalline quality of the TiO2 films studied from AFM. The surface of TiO2 films and the crystalline size of the sample were increased gradually with respect to a temperature that is observed in SEM. The elemental composition determined by the energy dispersive analysis of EDAX showed that TiO2 thin films were highly stoichiometric. Further, the higher optical transmittance (∼93%) was obtained with 450 °C annealed ITO/ TiO2 film. The optical band gap increased along with annealing temperatures (300, 350, 400 and 450 °C). All the above results of this present work can be utilized for solar cell and optoelectronic device applications.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0018120</doi><tpages>6</tpages><oa>free_for_read</oa></addata></record> |
fulltext | fulltext |
identifier | ISSN: 0094-243X |
ispartof | AIP conference proceedings, 2020, Vol.2280 (1) |
issn | 0094-243X 1551-7616 |
language | eng |
recordid | cdi_proquest_journals_2455628887 |
source | American Institute of Physics (AIP) Journals |
subjects | Annealing Crystal structure Crystallinity Electron beams Evaporation Glass substrates Grain size Optoelectronic devices Photovoltaic cells Solar cells Thin films Titanium dioxide |
title | Structural, morphological and 1/f noise properties of ITO/TiO2 thin films by e-beam evaporation system for optoelectronic device applications |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-01T09%3A30%3A31IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_scita&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Structural,%20morphological%20and%201/f%20noise%20properties%20of%20ITO/TiO2%20thin%20films%20by%20e-beam%20evaporation%20system%20for%20optoelectronic%20device%20applications&rft.btitle=AIP%20conference%20proceedings&rft.au=Manjunath,%20V.&rft.date=2020-11-04&rft.volume=2280&rft.issue=1&rft.issn=0094-243X&rft.eissn=1551-7616&rft.coden=APCPCS&rft_id=info:doi/10.1063/5.0018120&rft_dat=%3Cproquest_scita%3E2455628887%3C/proquest_scita%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2455628887&rft_id=info:pmid/&rfr_iscdi=true |