QFN-Packaged Bandpass Filter With Intertwined Circular Spiral Inductor and Integrated Center-Located Capacitors Using Integrated Passive Device Technology

This paper describes the implementation of a miniaturized quad flat no-lead (QFN)-packaged bandpass filter (BPF) with a combination of an intertwined circular spiral inductor and two types of integrated center-located capacitors using gallium-arsenide-based integrated passive device (IPD) fabricatio...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE access 2019, Vol.7, p.13597-13607
Hauptverfasser: Wang, Zhi-Ji, Kim, Eun-Seong, Liang, Jun-Ge, Kim, Nam-Young
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:This paper describes the implementation of a miniaturized quad flat no-lead (QFN)-packaged bandpass filter (BPF) with a combination of an intertwined circular spiral inductor and two types of integrated center-located capacitors using gallium-arsenide-based integrated passive device (IPD) fabrication technology. Air-bridge structures were introduced into the outer circular spiral inductor to save space and to provide the filter with a compact chip area of 1192.5\times 1012.7 \,\,\mu \text{m}^{2} . An equivalent circuit was modeled, the current density and variable dimensional parameters were simulated, and the fabrication process was introduced to achieve a better understanding of the IPD BPF. The proposed device was packaged using the QFN-packaging technology and was measured to possess a single passband with a central frequency of 1.91 GHz (return loss: 28.8 dB) and a fractional bandwidth of 72.69% (insertion loss: 0.62 dB). One transmission zero was obtained on the right side of the passband at 4.78 GHz with an amplitude of 35.95 dB. The fabricated BPF can be used in various {L} -band applications, such as mobile service, satellite navigation, telecommunications, and aircraft surveillance, due to its miniaturized chip size and high-performance characteristics.
ISSN:2169-3536
2169-3536
DOI:10.1109/ACCESS.2019.2893457