Design and Fabrication Approaches of 400-600 V 4H-SiC Lateral MOSFETs for Emerging Power ICs Application

This article reports the demonstration and fabrication of 400-600 V, 4H-SiC lateral MOSFETs on 6-in, N+ substrates. The P-top was implanted on an \text{N}\boldsymbol - drift region to create a single reduced surface field (RESURF) structure to alleviate the electric field on the surface. The diffe...

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