Electron Irradiation Effects and Defects Analysis of the Inverted Metamorphic Four-Junction Solar Cells

The degradation of inverted metamorphic four-junction (GaInP/GaAs/In 0.3 Ga 0.7 As/In 0.58 Ga 0.42 As, IMM4J) solar cells irradiated by 1-MeV electrons was investigated via their spectral responses and the characterization of their electrical properties. As in the case of traditional three-junction...

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Veröffentlicht in:	IEEE journal of photovoltaics 2020-11, Vol.10 (6), p.1712-1720
Hauptverfasser:	Zhang, Yanqing, Qi, Chunhua, Wang, Tianqi, Ma, Guoliang, Tsai, Hsu-Sheng, Liu, Chaoming, Zhou, Jiaming, Wei, Yidan, Li, Heyi, Xiao, Liyi, Ma, Yao, Wang, Duowei, Tang, Changxin, Li, Juncheng, Wu, Zhenlong, Huo, Mingxue
Format:	Artikel
Sprache:	eng
Schlagworte:	Circuits Conduction bands Current measurement Deep level transient spectroscopy Defect analysis Degradation Design optimization Electrical properties electron beam Electron beams Electron irradiation Emission analysis First principles Fluence Gallium indium phosphide inverted metamorphic four-junction (IMM4J) solar cell irradiation effects Open circuit voltage Photovoltaic cells Photovoltaic systems Radiation damage Radiation effects Short circuit currents Solar cells Spectra Spectral sensitivity Sum rules
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