High-mobility carriers induced by chemical doping in the candidate nodal-line semimetal CaAgP

We report the electronic properties of single crystals of the candidate nodal-line semimetal CaAgP. The transport properties of CaAgP are understood within the framework of a hole-doped nodal-line semimetal. In contrast, Pd-doped CaAgP shows a drastic increase of magnetoresistance at low magnetic fi...

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Veröffentlicht in:	Physical review. B 2020-09, Vol.102 (11), p.1, Article 115101
Hauptverfasser:	Okamoto, Yoshihiko, Saigusa, Kazushige, Wada, Taichi, Yamakawa, Youichi, Yamakage, Ai, Sasagawa, Takao, Katayama, Naoyuki, Takatsu, Hiroshi, Kageyama, Hiroshi, Takenaka, Koshi
Format:	Artikel
Sprache:	eng
Schlagworte:	Doping Electrical resistivity Electronic properties Low temperature Magnetoresistance Magnetoresistivity Single crystals Transport properties
Online-Zugang:	Volltext
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