High-mobility carriers induced by chemical doping in the candidate nodal-line semimetal CaAgP
We report the electronic properties of single crystals of the candidate nodal-line semimetal CaAgP. The transport properties of CaAgP are understood within the framework of a hole-doped nodal-line semimetal. In contrast, Pd-doped CaAgP shows a drastic increase of magnetoresistance at low magnetic fi...
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| Veröffentlicht in: | Physical review. B 2020-09, Vol.102 (11), p.1, Article 115101 |
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| container_title | Physical review. B |
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| creator | Okamoto, Yoshihiko Saigusa, Kazushige Wada, Taichi Yamakawa, Youichi Yamakage, Ai Sasagawa, Takao Katayama, Naoyuki Takatsu, Hiroshi Kageyama, Hiroshi Takenaka, Koshi |
| description | We report the electronic properties of single crystals of the candidate nodal-line semimetal CaAgP. The transport properties of CaAgP are understood within the framework of a hole-doped nodal-line semimetal. In contrast, Pd-doped CaAgP shows a drastic increase of magnetoresistance at low magnetic fields and a strong decrease of electrical resistivity at low temperatures probably due to weak antilocalization. Hall conductivity data indicated that the Pd-doped CaAgP has not only hole carriers induced by the Pd doping, but also high-mobility electron carriers in the proximity of the Dirac point. Electrical resistivity of Pd-doped CaAgP also showed a superconducting transition with onset temperature of 1.7 − 1.8 K. |
| doi_str_mv | 10.1103/PhysRevB.102.115101 |
| format | Article |
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Electrical resistivity of Pd-doped CaAgP also showed a superconducting transition with onset temperature of 1.7 − 1.8 K.</description><subject>Doping</subject><subject>Electrical resistivity</subject><subject>Electronic properties</subject><subject>Low temperature</subject><subject>Magnetoresistance</subject><subject>Magnetoresistivity</subject><subject>Single crystals</subject><subject>Transport properties</subject><issn>2469-9950</issn><issn>2469-9969</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNo9kE1LAzEQhoMoWGp_gZcFz1vztdnkWItaoWARPUrIJrPdlP2oyVbov2-k6mmG532YgRehW4LnhGB2v2mO8Q2-H-YE00QKgskFmlAuVK6UUJf_e4Gv0SzGHcaYCKxKrCboc-W3Td4NlW_9eMysCcFDiJnv3cGCy6rEGui8NW3mhr3vtynKxgaS2jvvzAhZPzjT5q3vIYtJ7WBM8tIstpsbdFWbNsLsd07Rx9Pj-3KVr1-fX5aLdW4ZZ2MOZVVwYUogVBpWuppJZh2rRcWFpAVA5Yii1HBppeAgHS6BKg41KwmuFbApujvf3Yfh6wBx1LvhEPr0UlNekKIohVTJYmfLhiHGALXeB9-ZcNQE658q9V-VCVB9rpKdAL8gaMI</recordid><startdate>20200901</startdate><enddate>20200901</enddate><creator>Okamoto, Yoshihiko</creator><creator>Saigusa, Kazushige</creator><creator>Wada, Taichi</creator><creator>Yamakawa, Youichi</creator><creator>Yamakage, Ai</creator><creator>Sasagawa, Takao</creator><creator>Katayama, Naoyuki</creator><creator>Takatsu, Hiroshi</creator><creator>Kageyama, Hiroshi</creator><creator>Takenaka, Koshi</creator><general>American Physical Society</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>H8D</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20200901</creationdate><title>High-mobility carriers induced by chemical doping in the candidate nodal-line semimetal CaAgP</title><author>Okamoto, Yoshihiko ; Saigusa, Kazushige ; Wada, Taichi ; Yamakawa, Youichi ; Yamakage, Ai ; Sasagawa, Takao ; Katayama, Naoyuki ; Takatsu, Hiroshi ; Kageyama, Hiroshi ; Takenaka, Koshi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c343t-e7b546a7e128a37df383cd3f6b46825eebd1922a48c864e8d07e294ef3710f9e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Doping</topic><topic>Electrical resistivity</topic><topic>Electronic properties</topic><topic>Low temperature</topic><topic>Magnetoresistance</topic><topic>Magnetoresistivity</topic><topic>Single crystals</topic><topic>Transport properties</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Okamoto, Yoshihiko</creatorcontrib><creatorcontrib>Saigusa, Kazushige</creatorcontrib><creatorcontrib>Wada, Taichi</creatorcontrib><creatorcontrib>Yamakawa, Youichi</creatorcontrib><creatorcontrib>Yamakage, Ai</creatorcontrib><creatorcontrib>Sasagawa, Takao</creatorcontrib><creatorcontrib>Katayama, Naoyuki</creatorcontrib><creatorcontrib>Takatsu, Hiroshi</creatorcontrib><creatorcontrib>Kageyama, Hiroshi</creatorcontrib><creatorcontrib>Takenaka, Koshi</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Physical review. 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In contrast, Pd-doped CaAgP shows a drastic increase of magnetoresistance at low magnetic fields and a strong decrease of electrical resistivity at low temperatures probably due to weak antilocalization. Hall conductivity data indicated that the Pd-doped CaAgP has not only hole carriers induced by the Pd doping, but also high-mobility electron carriers in the proximity of the Dirac point. Electrical resistivity of Pd-doped CaAgP also showed a superconducting transition with onset temperature of 1.7 − 1.8 K.</abstract><cop>College Park</cop><pub>American Physical Society</pub><doi>10.1103/PhysRevB.102.115101</doi></addata></record> |
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| subjects | Doping Electrical resistivity Electronic properties Low temperature Magnetoresistance Magnetoresistivity Single crystals Transport properties |
| title | High-mobility carriers induced by chemical doping in the candidate nodal-line semimetal CaAgP |
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