Single-Electron Transport in Colloidal Quantum Dots of Narrow-Gap Semiconductors

Single-electron transport in a planar structure of InSb, PbS, and CdSe semiconductor colloidal quantum dots has been studied by scanning tunneling microscopy. Current dips similar to the Coulomb gap have been observed in the I – V characteristics. The qualitative and numerical comparative estimates...

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Veröffentlicht in:Technical physics letters 2020-09, Vol.46 (9), p.881-884
Hauptverfasser: Zhukov, N. D., Gavrikov, M. V., Kryl’skii, D. V.
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Kryl’skii, D. V.
description Single-electron transport in a planar structure of InSb, PbS, and CdSe semiconductor colloidal quantum dots has been studied by scanning tunneling microscopy. Current dips similar to the Coulomb gap have been observed in the I – V characteristics. The qualitative and numerical comparative estimates suggest that a structure consisting of a set of quantum dots exhibits single-electron transport and a phenomenon similar to the Coulomb blockade. The white light illumination of the sample during the measurements of the I – V characteristics breaks the Coulomb blockade and one can expect that a device element based on such a structure will respond to individual photons. In the Coulomb gap region, current oscillations at terahertz frequencies can occur.
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subjects Cadmium selenides
Classical and Continuum Physics
Electron transport
Intermetallic compounds
Physics
Physics and Astronomy
Planar structures
Qualitative analysis
Quantum dots
Single electrons
Terahertz frequencies
Transport phenomena
White light
title Single-Electron Transport in Colloidal Quantum Dots of Narrow-Gap Semiconductors
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