Deep traps in InGaN/GaN single quantum well structures grown with and without InGaN underlayers

The electrical properties and deep trap spectra were compared for near-UV GaN/InGaN quantum well (QW) structures grown on free-standing GaN substrates. The structures differed by the presence or absence of a thin (110 nm) InGaN layer inserted between the high temperature GaN buffer and the QW region...

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Veröffentlicht in:	Journal of alloys and compounds 2020-12, Vol.845, p.156269, Article 156269
Hauptverfasser:	Polyakov, A.Y., Haller, C., Butté, R., Smirnov, N.B., Alexanyan, L.A., Kochkova, A.I., Shikoh, S.A., Shchemerov, I.V., Chernykh, A.V., Lagov, P.B., Pavlov, Yu S., Carlin, J.-F., Mosca, M., Grandjean, N., Pearton, S.J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Deep level transient spectroscopy Electrical properties Gallium nitrides High temperature Indium gallium nitrides Irradiation Light emitting diodes Quantum wells Radiation tolerance Spectrum analysis Substrates Surface defects
Online-Zugang:	Volltext
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