Voltage-induced magnetization switching method utilizing dipole coupled magnetic tunnel junction

[Display omitted] •A novel magnetic tunnel junction of switching/insulator/auxiliary layers is proposed.•The MTJ can be accurately regulated by a low voltage to complete repeatable logic writing at room temperature without reading the initial state.•No precise requirement for the time of voltage app...

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Veröffentlicht in:	Journal of magnetism and magnetic materials 2020-11, Vol.513, p.167105, Article 167105
Hauptverfasser:	Liu, Jiahao, Huang, Lu, Yang, Xiaokuo, Li, Cheng, Xu, Nuo, Yang, Binbin, Duan, Zhikui, Zhu, Liyang, Fang, Liang
Format:	Artikel
Sprache:	eng
Schlagworte:	Dipole interactions Electric potential Electrodes Energy consumption Magnetic switching Magnetic tunnel junction Magnetization Magnetostriction Mathematical models Multiferroics Piezoelectricity Room temperature Spintronics Straintronics Substrates Tunnel junctions Voltage Voltage control
Online-Zugang:	Volltext
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