Lasing dynamics of diode-pumped Yb - Er laser with a passive Q switch exposed to high-power external light
The temporal dynamics of diode-side-pumped Yb - Er laser, with a passive Co2+ : MgAl2O4 Q switch illuminated by a light beam (total fluence of 0.15 - 0.16 J cm−2) from a semiconductor pulsed module, is investigated. It is shown that, using this external illumination, one can change the lasing onset...
Gespeichert in:
Veröffentlicht in: | Quantum electronics (Woodbury, N.Y.) N.Y.), 2020-09, Vol.50 (9), p.822-825 |
---|---|
Hauptverfasser: | , , , , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | 825 |
---|---|
container_issue | 9 |
container_start_page | 822 |
container_title | Quantum electronics (Woodbury, N.Y.) |
container_volume | 50 |
creator | Batura, E.O. Bobretsova, Yu.K. Bogdanovich, M.V. Veselov, D.A. Grigor'ev, A.V. Dudikov, V.N. Kot, A.M. Pikhtin, N.A. Ryabtsev, A.G. Ryabtsev, G.I. Slipchenko, S.O. Shpak, P.V. |
description | The temporal dynamics of diode-side-pumped Yb - Er laser, with a passive Co2+ : MgAl2O4 Q switch illuminated by a light beam (total fluence of 0.15 - 0.16 J cm−2) from a semiconductor pulsed module, is investigated. It is shown that, using this external illumination, one can change the lasing onset delay and the time jitter ΔTgi. The dependence of ΔTgi on the interval between the instant of switching the illumination module on and the lasing peak position ti has a minimum at |ti| ≈ 10 μs. The decrease in ΔTgi with a change in |ti| from 90 to 10 μs indicates that instant of lasing peak occurrence for the Yb - Er laser is partially controlled by the pulse from the highly stable semiconductor module. If |ti| < 10 μs, the enhanced luminescence fluence in the cavity of Yb - Er laser exceeds 0.16 J cm−2; the light beam from the module does not affect much the lasing process in the ytterbium - erbium laser; and, as a consequence, the time jitter recovers the initial value. |
doi_str_mv | 10.1070/QEL17274 |
format | Article |
fullrecord | <record><control><sourceid>proquest_osti_</sourceid><recordid>TN_cdi_proquest_journals_2448679510</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2440688968</sourcerecordid><originalsourceid>FETCH-LOGICAL-c330t-dabb0f2929f91caadddd418ea1f0b2d817753ecab8a9eb8e51887f4d4072be573</originalsourceid><addsrcrecordid>eNqN0U1LxDAQBuAiCoou-BMCevBSTdK0SY4i6wcsyIIePIU0mdpIt4lNVtd_b2QVjzqXGYaHl4EpimOCzwnm-GI5XxBOOdspDghrRMm4lLt5xk1VckHEfjGL0bW4ZgzXohEHxctCRzc-I_sx6pUzEfkOWectlGG9CmDRU4tKNJ_QoCNM6N2lHmkUdI55A7REMW9Mj2ATfMw6edS7574M_j1r2CSYRj2gIe_SUbHX6SHC7LsfFo_X84er23Jxf3N3dbkoTVXhVFrdtrijkspOEqO1zcWIAE063FIrCOd1BUa3QktoBdRECN4xyzCnLdS8OixOtrk-JqeicQlMb_w4gkmKVoQRKetfFSb_uoaY1Itffx0bFWVMNFzWBP-hcCOEbERWZ1tlJh_jBJ0Kk1vp6UMRrL4eo34ek-npljoffrP-yV5hUDVWUglKVbBd9QlUoZat</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2440688968</pqid></control><display><type>article</type><title>Lasing dynamics of diode-pumped Yb - Er laser with a passive Q switch exposed to high-power external light</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Batura, E.O. ; Bobretsova, Yu.K. ; Bogdanovich, M.V. ; Veselov, D.A. ; Grigor'ev, A.V. ; Dudikov, V.N. ; Kot, A.M. ; Pikhtin, N.A. ; Ryabtsev, A.G. ; Ryabtsev, G.I. ; Slipchenko, S.O. ; Shpak, P.V.</creator><creatorcontrib>Batura, E.O. ; Bobretsova, Yu.K. ; Bogdanovich, M.V. ; Veselov, D.A. ; Grigor'ev, A.V. ; Dudikov, V.N. ; Kot, A.M. ; Pikhtin, N.A. ; Ryabtsev, A.G. ; Ryabtsev, G.I. ; Slipchenko, S.O. ; Shpak, P.V.</creatorcontrib><description>The temporal dynamics of diode-side-pumped Yb - Er laser, with a passive Co2+ : MgAl2O4 Q switch illuminated by a light beam (total fluence of 0.15 - 0.16 J cm−2) from a semiconductor pulsed module, is investigated. It is shown that, using this external illumination, one can change the lasing onset delay and the time jitter ΔTgi. The dependence of ΔTgi on the interval between the instant of switching the illumination module on and the lasing peak position ti has a minimum at |ti| ≈ 10 μs. The decrease in ΔTgi with a change in |ti| from 90 to 10 μs indicates that instant of lasing peak occurrence for the Yb - Er laser is partially controlled by the pulse from the highly stable semiconductor module. If |ti| < 10 μs, the enhanced luminescence fluence in the cavity of Yb - Er laser exceeds 0.16 J cm−2; the light beam from the module does not affect much the lasing process in the ytterbium - erbium laser; and, as a consequence, the time jitter recovers the initial value.</description><identifier>ISSN: 1063-7818</identifier><identifier>EISSN: 1468-4799</identifier><identifier>DOI: 10.1070/QEL17274</identifier><language>eng</language><publisher>Bristol: Kvantovaya Elektronika, Turpion Ltd and IOP Publishing</publisher><subject>ATOMIC AND MOLECULAR PHYSICS ; BEAMS ; CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ; Cobalt ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; diode pumping ; ERBIUM ; Fluence ; ILLUMINANCE ; Illumination ; Laser beams ; LASERS ; Lasing ; Light ; Light beams ; LUMINESCENCE ; Modules ; passive Q switching ; PEAKS ; pulse jitter ; PULSES ; Q-SWITCHING ; semiconductor laser module ; SEMICONDUCTOR MATERIALS ; solid-state laser ; Time dependence ; Vibration ; VISIBLE RADIATION ; YTTERBIUM</subject><ispartof>Quantum electronics (Woodbury, N.Y.), 2020-09, Vol.50 (9), p.822-825</ispartof><rights>2020 Kvantovaya Elektronika, Turpion Ltd and IOP Publishing Ltd</rights><rights>Copyright IOP Publishing Sep 2020</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c330t-dabb0f2929f91caadddd418ea1f0b2d817753ecab8a9eb8e51887f4d4072be573</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.1070/QEL17274/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>230,314,776,780,881,27901,27902,53821,53868</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/23141995$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Batura, E.O.</creatorcontrib><creatorcontrib>Bobretsova, Yu.K.</creatorcontrib><creatorcontrib>Bogdanovich, M.V.</creatorcontrib><creatorcontrib>Veselov, D.A.</creatorcontrib><creatorcontrib>Grigor'ev, A.V.</creatorcontrib><creatorcontrib>Dudikov, V.N.</creatorcontrib><creatorcontrib>Kot, A.M.</creatorcontrib><creatorcontrib>Pikhtin, N.A.</creatorcontrib><creatorcontrib>Ryabtsev, A.G.</creatorcontrib><creatorcontrib>Ryabtsev, G.I.</creatorcontrib><creatorcontrib>Slipchenko, S.O.</creatorcontrib><creatorcontrib>Shpak, P.V.</creatorcontrib><title>Lasing dynamics of diode-pumped Yb - Er laser with a passive Q switch exposed to high-power external light</title><title>Quantum electronics (Woodbury, N.Y.)</title><addtitle>Quantum Electron</addtitle><description>The temporal dynamics of diode-side-pumped Yb - Er laser, with a passive Co2+ : MgAl2O4 Q switch illuminated by a light beam (total fluence of 0.15 - 0.16 J cm−2) from a semiconductor pulsed module, is investigated. It is shown that, using this external illumination, one can change the lasing onset delay and the time jitter ΔTgi. The dependence of ΔTgi on the interval between the instant of switching the illumination module on and the lasing peak position ti has a minimum at |ti| ≈ 10 μs. The decrease in ΔTgi with a change in |ti| from 90 to 10 μs indicates that instant of lasing peak occurrence for the Yb - Er laser is partially controlled by the pulse from the highly stable semiconductor module. If |ti| < 10 μs, the enhanced luminescence fluence in the cavity of Yb - Er laser exceeds 0.16 J cm−2; the light beam from the module does not affect much the lasing process in the ytterbium - erbium laser; and, as a consequence, the time jitter recovers the initial value.</description><subject>ATOMIC AND MOLECULAR PHYSICS</subject><subject>BEAMS</subject><subject>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</subject><subject>Cobalt</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>diode pumping</subject><subject>ERBIUM</subject><subject>Fluence</subject><subject>ILLUMINANCE</subject><subject>Illumination</subject><subject>Laser beams</subject><subject>LASERS</subject><subject>Lasing</subject><subject>Light</subject><subject>Light beams</subject><subject>LUMINESCENCE</subject><subject>Modules</subject><subject>passive Q switching</subject><subject>PEAKS</subject><subject>pulse jitter</subject><subject>PULSES</subject><subject>Q-SWITCHING</subject><subject>semiconductor laser module</subject><subject>SEMICONDUCTOR MATERIALS</subject><subject>solid-state laser</subject><subject>Time dependence</subject><subject>Vibration</subject><subject>VISIBLE RADIATION</subject><subject>YTTERBIUM</subject><issn>1063-7818</issn><issn>1468-4799</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNqN0U1LxDAQBuAiCoou-BMCevBSTdK0SY4i6wcsyIIePIU0mdpIt4lNVtd_b2QVjzqXGYaHl4EpimOCzwnm-GI5XxBOOdspDghrRMm4lLt5xk1VckHEfjGL0bW4ZgzXohEHxctCRzc-I_sx6pUzEfkOWectlGG9CmDRU4tKNJ_QoCNM6N2lHmkUdI55A7REMW9Mj2ATfMw6edS7574M_j1r2CSYRj2gIe_SUbHX6SHC7LsfFo_X84er23Jxf3N3dbkoTVXhVFrdtrijkspOEqO1zcWIAE063FIrCOd1BUa3QktoBdRECN4xyzCnLdS8OixOtrk-JqeicQlMb_w4gkmKVoQRKetfFSb_uoaY1Itffx0bFWVMNFzWBP-hcCOEbERWZ1tlJh_jBJ0Kk1vp6UMRrL4eo34ek-npljoffrP-yV5hUDVWUglKVbBd9QlUoZat</recordid><startdate>20200901</startdate><enddate>20200901</enddate><creator>Batura, E.O.</creator><creator>Bobretsova, Yu.K.</creator><creator>Bogdanovich, M.V.</creator><creator>Veselov, D.A.</creator><creator>Grigor'ev, A.V.</creator><creator>Dudikov, V.N.</creator><creator>Kot, A.M.</creator><creator>Pikhtin, N.A.</creator><creator>Ryabtsev, A.G.</creator><creator>Ryabtsev, G.I.</creator><creator>Slipchenko, S.O.</creator><creator>Shpak, P.V.</creator><general>Kvantovaya Elektronika, Turpion Ltd and IOP Publishing</general><general>IOP Publishing</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>20200901</creationdate><title>Lasing dynamics of diode-pumped Yb - Er laser with a passive Q switch exposed to high-power external light</title><author>Batura, E.O. ; Bobretsova, Yu.K. ; Bogdanovich, M.V. ; Veselov, D.A. ; Grigor'ev, A.V. ; Dudikov, V.N. ; Kot, A.M. ; Pikhtin, N.A. ; Ryabtsev, A.G. ; Ryabtsev, G.I. ; Slipchenko, S.O. ; Shpak, P.V.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c330t-dabb0f2929f91caadddd418ea1f0b2d817753ecab8a9eb8e51887f4d4072be573</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>ATOMIC AND MOLECULAR PHYSICS</topic><topic>BEAMS</topic><topic>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</topic><topic>Cobalt</topic><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>diode pumping</topic><topic>ERBIUM</topic><topic>Fluence</topic><topic>ILLUMINANCE</topic><topic>Illumination</topic><topic>Laser beams</topic><topic>LASERS</topic><topic>Lasing</topic><topic>Light</topic><topic>Light beams</topic><topic>LUMINESCENCE</topic><topic>Modules</topic><topic>passive Q switching</topic><topic>PEAKS</topic><topic>pulse jitter</topic><topic>PULSES</topic><topic>Q-SWITCHING</topic><topic>semiconductor laser module</topic><topic>SEMICONDUCTOR MATERIALS</topic><topic>solid-state laser</topic><topic>Time dependence</topic><topic>Vibration</topic><topic>VISIBLE RADIATION</topic><topic>YTTERBIUM</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Batura, E.O.</creatorcontrib><creatorcontrib>Bobretsova, Yu.K.</creatorcontrib><creatorcontrib>Bogdanovich, M.V.</creatorcontrib><creatorcontrib>Veselov, D.A.</creatorcontrib><creatorcontrib>Grigor'ev, A.V.</creatorcontrib><creatorcontrib>Dudikov, V.N.</creatorcontrib><creatorcontrib>Kot, A.M.</creatorcontrib><creatorcontrib>Pikhtin, N.A.</creatorcontrib><creatorcontrib>Ryabtsev, A.G.</creatorcontrib><creatorcontrib>Ryabtsev, G.I.</creatorcontrib><creatorcontrib>Slipchenko, S.O.</creatorcontrib><creatorcontrib>Shpak, P.V.</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>Quantum electronics (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Batura, E.O.</au><au>Bobretsova, Yu.K.</au><au>Bogdanovich, M.V.</au><au>Veselov, D.A.</au><au>Grigor'ev, A.V.</au><au>Dudikov, V.N.</au><au>Kot, A.M.</au><au>Pikhtin, N.A.</au><au>Ryabtsev, A.G.</au><au>Ryabtsev, G.I.</au><au>Slipchenko, S.O.</au><au>Shpak, P.V.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Lasing dynamics of diode-pumped Yb - Er laser with a passive Q switch exposed to high-power external light</atitle><jtitle>Quantum electronics (Woodbury, N.Y.)</jtitle><addtitle>Quantum Electron</addtitle><date>2020-09-01</date><risdate>2020</risdate><volume>50</volume><issue>9</issue><spage>822</spage><epage>825</epage><pages>822-825</pages><issn>1063-7818</issn><eissn>1468-4799</eissn><abstract>The temporal dynamics of diode-side-pumped Yb - Er laser, with a passive Co2+ : MgAl2O4 Q switch illuminated by a light beam (total fluence of 0.15 - 0.16 J cm−2) from a semiconductor pulsed module, is investigated. It is shown that, using this external illumination, one can change the lasing onset delay and the time jitter ΔTgi. The dependence of ΔTgi on the interval between the instant of switching the illumination module on and the lasing peak position ti has a minimum at |ti| ≈ 10 μs. The decrease in ΔTgi with a change in |ti| from 90 to 10 μs indicates that instant of lasing peak occurrence for the Yb - Er laser is partially controlled by the pulse from the highly stable semiconductor module. If |ti| < 10 μs, the enhanced luminescence fluence in the cavity of Yb - Er laser exceeds 0.16 J cm−2; the light beam from the module does not affect much the lasing process in the ytterbium - erbium laser; and, as a consequence, the time jitter recovers the initial value.</abstract><cop>Bristol</cop><pub>Kvantovaya Elektronika, Turpion Ltd and IOP Publishing</pub><doi>10.1070/QEL17274</doi><tpages>4</tpages></addata></record> |
fulltext | fulltext |
identifier | ISSN: 1063-7818 |
ispartof | Quantum electronics (Woodbury, N.Y.), 2020-09, Vol.50 (9), p.822-825 |
issn | 1063-7818 1468-4799 |
language | eng |
recordid | cdi_proquest_journals_2448679510 |
source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
subjects | ATOMIC AND MOLECULAR PHYSICS BEAMS CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS Cobalt CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY diode pumping ERBIUM Fluence ILLUMINANCE Illumination Laser beams LASERS Lasing Light Light beams LUMINESCENCE Modules passive Q switching PEAKS pulse jitter PULSES Q-SWITCHING semiconductor laser module SEMICONDUCTOR MATERIALS solid-state laser Time dependence Vibration VISIBLE RADIATION YTTERBIUM |
title | Lasing dynamics of diode-pumped Yb - Er laser with a passive Q switch exposed to high-power external light |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-02T03%3A11%3A06IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Lasing%20dynamics%20of%20diode-pumped%20Yb%20-%20Er%20laser%20with%20a%20passive%20Q%20switch%20exposed%20to%20high-power%20external%20light&rft.jtitle=Quantum%20electronics%20(Woodbury,%20N.Y.)&rft.au=Batura,%20E.O.&rft.date=2020-09-01&rft.volume=50&rft.issue=9&rft.spage=822&rft.epage=825&rft.pages=822-825&rft.issn=1063-7818&rft.eissn=1468-4799&rft_id=info:doi/10.1070/QEL17274&rft_dat=%3Cproquest_osti_%3E2440688968%3C/proquest_osti_%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2440688968&rft_id=info:pmid/&rfr_iscdi=true |