Interfacial integrity enhancement of atomic layer deposited alumina on boron doped diamond by surface plasma functionalization

High dielectric constant (high-κ) thin films are ubiquitous in research as they impart enhanced properties to microelectronic applications. Novel combinations for coupling high-κ and ultra-wide band gap semiconductors are being investigated for niche applications, dependent on the environmental cond...

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Veröffentlicht in:	Surface & coatings technology 2020-09, Vol.397, p.125991, Article 125991
Hauptverfasser:	Jaggernauth, A., Silva, R.M., Neto, M.A., Oliveira, F.J., Bdikin, I.K., Alegre, M.P., Gutiérrez, M., Araújo, D., Mendes, J.C., Silva, R.F.
Format:	Artikel
Sprache:	eng
Schlagworte:	Alumina Alumina films Aluminum oxide Atomic layer deposition Atomic layer epitaxy Boron Boron doped diamond Delamination Diamond films Diamonds Interface stability Ligands Nanoindentation Plasma Plasma treatment Plastic deformation Semiconducting films Thin films X ray photoelectron spectroscopy
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