Carrier conduction mechanisms of WSe2/p-type Ge epilayer heterojunction depending on the measurement temperature and applied bias

We have fabricated a WSe2/p-type Ge epilayer heterojunction and analyzed its electrical and carrier transport characteristics by temperature-dependent current–voltage (I–V) measurements in the range of 125–375 K. The WSe2/p-type Ge heterojunction showed rectifying I-V characteristics at room tempera...

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