25.11% efficiency silicon heterojunction solar cell with low deposition rate intrinsic amorphous silicon buffer layers

Here we report a certified efficiency of up to 25.11% for silicon heterojunction (SHJ) solar cells on a full size n-type M2 monocrystalline-silicon (c-Si) wafer (total area, 244.5 cm2). An ultra-thin intrinsic a-Si:H buffer layer was introduced on the c-Si wafer surface using a 13.56 MHz home-made R...

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Veröffentlicht in:	Solar energy materials and solar cells 2020-09, Vol.215, p.110643, Article 110643
Hauptverfasser:	Ru, Xiaoning, Qu, Minghao, Wang, Jianqiang, Ruan, Tianyu, Yang, Miao, Peng, Fuguo, Long, Wei, Zheng, Kun, Yan, Hui, Xu, Xixiang
Format:	Artikel
Sprache:	eng
Schlagworte:	Amorphous silicon Buffer layers Cell size Chemical vapor deposition Circuits Efficiency Energy conversion efficiency Fabrication Heterojunctions Low deposition rate Mass production Open circuit voltage Passivity Photovoltaic cells Short circuit currents Short-circuit current Silicon Silicon heterojunction solar cells Solar cells Surface passivation VHF
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