Charge fluctuations at the Si–SiO2 interface and its effect on surface recombination in solar cells

The Si–SiO2 interface has and will continue to play a major role in the development of silicon photovoltaic devices. This work presents a detailed examination of how charge at or near this interface influences device performance. New understanding is identified on the effect of charge-induced potent...

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Veröffentlicht in:Solar energy materials and solar cells 2020-09, Vol.215, p.110649, Article 110649
Hauptverfasser: Bonilla, Ruy S., Al-Dhahir, Isabel, Yu, Mingzhe, Hamer, Phillip, Altermatt, Pietro P.
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Sprache:eng
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