Organic small molecule-based RRAM for data storage and neuromorphic computing

Inexpensive and flexible organic resistive memory can be easily fabricated, scaled and stacked. Owing to these advantages, organic resistive memory is considered as a very promising technology capable of substituting current inorganic semiconductor-based memory technology. It has attracted a lot of attention from the scientific and engineering communities. In this mini-review, the recent state-of-the-art developments related to organic small molecules for resistive random-access memory (RRAM) have been emphasized. We first describe the general characteristics of RRAM devices, their typical structures, fabrication, classification, and switching mechanisms. Next, we discuss the usage of RRAM devices in next-generation computing. In particular, we discuss the use of organic small molecules and their composites in RRAM with various functionalities. Finally, the current challenges and developing trends of performance improvement for organic small molecule-based RRAM are discussed. Recent state-of-the-art developments related to organic small molecules for resistive random-access memory devices has been emphasized.