A New Direct Measurement Method of Time Dependent Dielectric Breakdown at High Frequency

A novel technique is presented for a direct evaluation of oxide breakdown under AC stress at high frequencies up to 500MHz. It relies on a RF setup, which combines a high speed pulse generator, transition converters and 50\Omega termination probes, to deliver to the device a digital AC signal with...

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Veröffentlicht in:	IEEE electron device letters 2020-10, Vol.41 (10), p.1460-1463
Hauptverfasser:	Arabi, Melissa, Garros, Xavier, Cluzel, Jacques, Rafik, Mustapha, Federspiel, Xavier, Ghibaudo, Gerard
Format:	Artikel
Sprache:	eng
Schlagworte:	CMOS reliability Converters Dielectric breakdown Dielectric measurement Electric breakdown Engineering Sciences Frequency measurement High frequencies high frequency Legal issues Logic gates Micro and nanotechnologies Microelectronics oxide breakdown Pulse generators RF setup Stress TDDB Time dependence Transistors
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