Charge Transport Calculation along Two‐Dimensional Metal/Semiconductor/Metal Systems

Two‐dimensional transistors are promising candidates for the next generation of nanoscale devices. Like the other alternatives, they also encounter problems such as instability under standard condition (STP), low channel mobility, small band gaps, and difficulty to integrate metal contacts. The latt...

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Veröffentlicht in:Israel journal of chemistry 2020-08, Vol.60 (8-9), p.888-896
Hauptverfasser: Stan, Gabriela Ben‐Melech, Dhaka, Kapil, Toroker, Maytal Caspary
Format: Artikel
Sprache:eng
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