Selective mask formation and gallium nitride template fabrication on patterned sapphire substrates for light-emitting diodes

Patterned sapphire substrates are composed of multiple planes, leading to the undesirable polycrystalline growth of gallium nitride (GaN) during template deposition. However, patterned sapphire substrates and templates with good crystalline quality would be useful for increasing the light extraction...

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Veröffentlicht in:	AIP advances 2020-09, Vol.10 (9), p.095001-095001-5
Hauptverfasser:	Cho, Seunghee, Jeong, Woo Seop, Ahn, Min Joo, Shim, Kyu-Yeon, Kang, Seong Ho, Byun, Dongjin
Format:	Artikel
Sprache:	eng
Schlagworte:	Compressive properties Gallium nitrides Light emitting diodes Polycrystals Sapphire Silicon dioxide Single crystals Substrates
Online-Zugang:	Volltext
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