Tunable electroluminescence from an n-ZnO/p-GaN heterojunction with a CsPbBr3 interlayer grown by pulsed laser deposition

Heterojunction light-emitting diodes (LED) based on n-ZnO/CsPbBr3/p-GaN have been fabricated by using pulsed laser deposition (PLD). The effects of the CsPbBr3 interlayer on the electroluminescence (EL) performance of n-ZnO/p-GaN have been systematically studied. It was found that the CsPbBr3 interl...

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Veröffentlicht in:	Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2020-01, Vol.8 (35), p.12240-12246
Hauptverfasser:	Huang, Yu, Zhou, Xiaoyu, Zhang, Lichun, Lin, Guochen, Xu, Man, Zhao, Yuan, Jiao, Mengmeng, Zhang, Dengying, Pan, Bingying, Zhu, Linwei, Zhao, Fengzhou
Format:	Artikel
Sprache:	eng
Schlagworte:	Electroluminescence Emission analysis Film thickness Gallium nitrides Heterojunctions Interlayers Light emitting diodes Pulsed laser deposition Pulsed lasers Zinc oxide
Online-Zugang:	Volltext
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