Tunable electroluminescence from an n-ZnO/p-GaN heterojunction with a CsPbBr3 interlayer grown by pulsed laser deposition
Heterojunction light-emitting diodes (LED) based on n-ZnO/CsPbBr3/p-GaN have been fabricated by using pulsed laser deposition (PLD). The effects of the CsPbBr3 interlayer on the electroluminescence (EL) performance of n-ZnO/p-GaN have been systematically studied. It was found that the CsPbBr3 interl...
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| Veröffentlicht in: | Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2020-01, Vol.8 (35), p.12240-12246 |
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| container_issue | 35 |
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| container_title | Journal of materials chemistry. C, Materials for optical and electronic devices |
| container_volume | 8 |
| creator | Huang, Yu Zhou, Xiaoyu Zhang, Lichun Lin, Guochen Xu, Man Zhao, Yuan Jiao, Mengmeng Zhang, Dengying Pan, Bingying Zhu, Linwei Zhao, Fengzhou |
| description | Heterojunction light-emitting diodes (LED) based on n-ZnO/CsPbBr3/p-GaN have been fabricated by using pulsed laser deposition (PLD). The effects of the CsPbBr3 interlayer on the electroluminescence (EL) performance of n-ZnO/p-GaN have been systematically studied. It was found that the CsPbBr3 interlayer plays an important role in the emission performance of the heterojunction LED. By adjusting the thickness of CsPbBr3, the emission peaks of the heterojunction LED change from violet to greenish-yellow, indicating that the electroluminescence characters can be tuned by the CsPbBr3 film thickness. Detailed emission mechanisms influenced by the CsPbBr3 film have been investigated using the Anderson band diagram. The results provide a new method for the fabrication of single-chip white LEDs. |
| doi_str_mv | 10.1039/d0tc02807j |
| format | Article |
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The effects of the CsPbBr3 interlayer on the electroluminescence (EL) performance of n-ZnO/p-GaN have been systematically studied. It was found that the CsPbBr3 interlayer plays an important role in the emission performance of the heterojunction LED. By adjusting the thickness of CsPbBr3, the emission peaks of the heterojunction LED change from violet to greenish-yellow, indicating that the electroluminescence characters can be tuned by the CsPbBr3 film thickness. Detailed emission mechanisms influenced by the CsPbBr3 film have been investigated using the Anderson band diagram. The results provide a new method for the fabrication of single-chip white LEDs.</description><identifier>ISSN: 2050-7526</identifier><identifier>EISSN: 2050-7534</identifier><identifier>DOI: 10.1039/d0tc02807j</identifier><language>eng</language><publisher>Cambridge: Royal Society of Chemistry</publisher><subject>Electroluminescence ; Emission analysis ; Film thickness ; Gallium nitrides ; Heterojunctions ; Interlayers ; Light emitting diodes ; Pulsed laser deposition ; Pulsed lasers ; Zinc oxide</subject><ispartof>Journal of materials chemistry. 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C, Materials for optical and electronic devices</title><description>Heterojunction light-emitting diodes (LED) based on n-ZnO/CsPbBr3/p-GaN have been fabricated by using pulsed laser deposition (PLD). The effects of the CsPbBr3 interlayer on the electroluminescence (EL) performance of n-ZnO/p-GaN have been systematically studied. It was found that the CsPbBr3 interlayer plays an important role in the emission performance of the heterojunction LED. By adjusting the thickness of CsPbBr3, the emission peaks of the heterojunction LED change from violet to greenish-yellow, indicating that the electroluminescence characters can be tuned by the CsPbBr3 film thickness. Detailed emission mechanisms influenced by the CsPbBr3 film have been investigated using the Anderson band diagram. The results provide a new method for the fabrication of single-chip white LEDs.</description><subject>Electroluminescence</subject><subject>Emission analysis</subject><subject>Film thickness</subject><subject>Gallium nitrides</subject><subject>Heterojunctions</subject><subject>Interlayers</subject><subject>Light emitting diodes</subject><subject>Pulsed laser deposition</subject><subject>Pulsed lasers</subject><subject>Zinc oxide</subject><issn>2050-7526</issn><issn>2050-7534</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNo9Tc1OwzAYixBITGMXniAS57L8NW2PMMFAmhiHceEypcnXrVWXlCTV1LcnCIQvtmzZRuiWkntKeLU0JGrCSlJ0F2jGSE6yIufi8l8zeY0WIXQkoaSylNUMTbvRqroHDD3o6F0_nloLQYPVgBvvTlhZbLNPu10O2Vq94SNE8K4brY6ts_jcxiNWeBXe60fPcWtT2qsJPD54d7a4nvAw9gEM7lVIroHBhfaneoOuGpWSxR_P0cfz0271km2269fVwyY70JzEzAhRFQJ4lcuKSlKYUmtmVNmAZEQRI1kyBBUNV7rSokhoKDWmYXVhagZ8ju5-dwfvvkYIcd-50dt0uWdC8JIIkjP-DQYGYIs</recordid><startdate>20200101</startdate><enddate>20200101</enddate><creator>Huang, Yu</creator><creator>Zhou, Xiaoyu</creator><creator>Zhang, Lichun</creator><creator>Lin, Guochen</creator><creator>Xu, Man</creator><creator>Zhao, Yuan</creator><creator>Jiao, Mengmeng</creator><creator>Zhang, Dengying</creator><creator>Pan, Bingying</creator><creator>Zhu, Linwei</creator><creator>Zhao, Fengzhou</creator><general>Royal Society of Chemistry</general><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20200101</creationdate><title>Tunable electroluminescence from an n-ZnO/p-GaN heterojunction with a CsPbBr3 interlayer grown by pulsed laser deposition</title><author>Huang, Yu ; Zhou, Xiaoyu ; Zhang, Lichun ; Lin, Guochen ; Xu, Man ; Zhao, Yuan ; Jiao, Mengmeng ; Zhang, Dengying ; Pan, Bingying ; Zhu, Linwei ; Zhao, Fengzhou</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-g150t-d44974e395691607d8cc2da8fe620a0d628cc414f3ac9c47777f11ddf2b7db2e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Electroluminescence</topic><topic>Emission analysis</topic><topic>Film thickness</topic><topic>Gallium nitrides</topic><topic>Heterojunctions</topic><topic>Interlayers</topic><topic>Light emitting diodes</topic><topic>Pulsed laser deposition</topic><topic>Pulsed lasers</topic><topic>Zinc oxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Huang, Yu</creatorcontrib><creatorcontrib>Zhou, Xiaoyu</creatorcontrib><creatorcontrib>Zhang, Lichun</creatorcontrib><creatorcontrib>Lin, Guochen</creatorcontrib><creatorcontrib>Xu, Man</creatorcontrib><creatorcontrib>Zhao, Yuan</creatorcontrib><creatorcontrib>Jiao, Mengmeng</creatorcontrib><creatorcontrib>Zhang, Dengying</creatorcontrib><creatorcontrib>Pan, Bingying</creatorcontrib><creatorcontrib>Zhu, Linwei</creatorcontrib><creatorcontrib>Zhao, Fengzhou</creatorcontrib><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of materials chemistry. C, Materials for optical and electronic devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Huang, Yu</au><au>Zhou, Xiaoyu</au><au>Zhang, Lichun</au><au>Lin, Guochen</au><au>Xu, Man</au><au>Zhao, Yuan</au><au>Jiao, Mengmeng</au><au>Zhang, Dengying</au><au>Pan, Bingying</au><au>Zhu, Linwei</au><au>Zhao, Fengzhou</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Tunable electroluminescence from an n-ZnO/p-GaN heterojunction with a CsPbBr3 interlayer grown by pulsed laser deposition</atitle><jtitle>Journal of materials chemistry. C, Materials for optical and electronic devices</jtitle><date>2020-01-01</date><risdate>2020</risdate><volume>8</volume><issue>35</issue><spage>12240</spage><epage>12246</epage><pages>12240-12246</pages><issn>2050-7526</issn><eissn>2050-7534</eissn><abstract>Heterojunction light-emitting diodes (LED) based on n-ZnO/CsPbBr3/p-GaN have been fabricated by using pulsed laser deposition (PLD). The effects of the CsPbBr3 interlayer on the electroluminescence (EL) performance of n-ZnO/p-GaN have been systematically studied. It was found that the CsPbBr3 interlayer plays an important role in the emission performance of the heterojunction LED. By adjusting the thickness of CsPbBr3, the emission peaks of the heterojunction LED change from violet to greenish-yellow, indicating that the electroluminescence characters can be tuned by the CsPbBr3 film thickness. Detailed emission mechanisms influenced by the CsPbBr3 film have been investigated using the Anderson band diagram. The results provide a new method for the fabrication of single-chip white LEDs.</abstract><cop>Cambridge</cop><pub>Royal Society of Chemistry</pub><doi>10.1039/d0tc02807j</doi><tpages>7</tpages></addata></record> |
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| ispartof | Journal of materials chemistry. C, Materials for optical and electronic devices, 2020-01, Vol.8 (35), p.12240-12246 |
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| language | eng |
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| source | Royal Society Of Chemistry Journals 2008- |
| subjects | Electroluminescence Emission analysis Film thickness Gallium nitrides Heterojunctions Interlayers Light emitting diodes Pulsed laser deposition Pulsed lasers Zinc oxide |
| title | Tunable electroluminescence from an n-ZnO/p-GaN heterojunction with a CsPbBr3 interlayer grown by pulsed laser deposition |
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