GaTe/CdS heterostructure with tunable electronic properties via external electric field and biaxial strain

This article aims to investigate the electronic properties of GaTe/CdS heterostructure using first-principles calculations based on density functional theory (DFT). A direct band gap of 0.804 eV and type-II band alignment are formed at the GaTe/CdS van der Waals heterobilayer interface, which is ben...

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Veröffentlicht in:	Journal of alloys and compounds 2020-08, Vol.832, p.154965, Article 154965
Hauptverfasser:	Jia, Yifan, Zhang, Yan, Wei, Xing, Guo, Tingting, Fan, Jibin, Ni, Lei, Weng, Yijun, Zha, Zhengdi, Liu, Jian, Tian, Ye, Li, Ting, Duan, Li
Format:	Artikel
Sprache:	eng
Schlagworte:	Band alignment Biaxial strain Density functional theory Electric field Electric fields Energy gap First principles GaTe/CdS heterostructure Heterostructures Nanoelectronics Optoelectronics
Online-Zugang:	Volltext
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