Structural, morphological and electrical properties of the Al/p-Cu2FeSnS4 thin film Schottky diode grown by two method

•Cu2FeSnS4 thin film was successfully deposited onto Mo substrate heated at 150 °C.•Structural analysis revealed the presence of stannite Cu2FeSnS4 phase.•A Schottky contact was obtained between Aluminum and p-Cu2FeSnS4 absorber layer. This work highlights some physical properties of Al/p-Cu2FeSnS4 Schottky diode fabricated by a two-stage method. Foremost, the Cu2FeSnS4 (CFTS) thin film was grown using thermal evaporation method onto heated Mo substrate temperature at 150 °C. After that, the as-deposited CFTS sample was annealed in a sulfur atmosphere at 400 °C for 30 min. Structural and morphological characterization were carried out by X-Ray diffraction, Raman scattering and scanning electron microscopy, whereas electrical study of Al/p-Cu2FeSnS4 junction was performed by using the current-voltage (I-V) measurement. Structural study revealed the presence of stannite CFTS phase and other peaks like Mo and MoS2. The hot probe method indicates that CFTS thin film exhibit p-conductivity type, also the film thickness was around 500 nm. The I-V characteristics showed that a Schottky contact was obtained between Aluminum and p-Cu2FeSnS4 absorber layer. The saturation current, the ideality factor and series resistance were determined from I-V experimental data. These parameters show important electrical properties such as a low series resistance and an ideality factor between 1 and 2.