Local structure and kinetics of paramagnetic defects, induced by γ-irradiation of the erbium doped Ag5Ga5Ge95S200 glasses

Defects induced by γ-irradiation in Er-free and Er-doped glasses Ag5Ga5Ge95S200 were studied using the Raman and EPR spectroscopies. It is shown that γ-irradiation causes an increase in the intensity of Raman bands related with formation of S3Ge-GeS3 structural groups. During the low-temperature ann...

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Veröffentlicht in:	Physica. B, Condensed matter Condensed matter, 2020-04, Vol.583, p.412030, Article 412030
Hauptverfasser:	Konchits, A.A., Shanina, B.D., Yukhymchuk, V.O., Halyan, V.V., Krasnovyd, S.V., Lebed, O.O., Shevchuk, M.V.
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Banded structure Chalcogenide glass Defects EPR Erbium Gamma irradiation Kinetics Low temperature Radiation Raman scattering Restoration Spectrum analysis Symmetry Temperature Tensors
Online-Zugang:	Volltext
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