THz Radiation of Photoconductive Antennas based on {LT-GaAa/GaAa:Si} Superlattice Structures
A material in the form of a multilayer structure based on low-temperature LT-GaAs grown on (111)A-oriented substrates is proposed for fabrication of THz photoconductive antennas. These structures contain active LT-GaAs layers and doping acceptor GaAs:Si-based layers. At the optical pump power of 19 ...
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| Veröffentlicht in: | Optics and spectroscopy 2020-07, Vol.128 (7), p.1010-1017 |
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| creator | Klochkov, A. N. Klimov, E. A. Solyankin, P. M. Konnikova, M. R. Vasil’evskii, I. S. Vinichenko, A. N. Shkurinov, A. P. Galiev, G. B. |
| description | A material in the form of a multilayer structure based on low-temperature LT-GaAs grown on (111)A-oriented substrates is proposed for fabrication of THz photoconductive antennas. These structures contain active LT-GaAs layers and doping acceptor GaAs:Si-based layers. At the optical pump power of 19 mW and the bias voltage of 30 V, a photoconductive antenna based on the optimized {LT-GaAs/GaAs:Si} (111)A structure emits THz pulses with the average power of 2.3 μW at the pulse repetition frequency of 80 MHz; the conversion efficiency is 1.2 × 10
–4
. It is shown that the dependence of the integral power of THz pulses of the antenna based on the {LT-GaAs/GaAs:Si} (111)A structure on the applied voltage is superlinear; the dependence of this parameter on the optical pump power is plotted as a curve with saturation. It is shown that the designed antennas have a practical application in THz spectroscopy of biological solutions. |
| doi_str_mv | 10.1134/S0030400X20070097 |
| format | Article |
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–4
. It is shown that the dependence of the integral power of THz pulses of the antenna based on the {LT-GaAs/GaAs:Si} (111)A structure on the applied voltage is superlinear; the dependence of this parameter on the optical pump power is plotted as a curve with saturation. It is shown that the designed antennas have a practical application in THz spectroscopy of biological solutions.</description><identifier>ISSN: 0030-400X</identifier><identifier>EISSN: 1562-6911</identifier><identifier>DOI: 10.1134/S0030400X20070097</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Antennas ; Dependence ; Electric potential ; Lasers ; Low temperature ; Multilayers ; Optical Devices ; Optics ; Photonics ; Physics ; Physics and Astronomy ; Pulse repetition frequency ; Silicon ; Substrates ; Superlattices ; Terahertz Optics ; Voltage</subject><ispartof>Optics and spectroscopy, 2020-07, Vol.128 (7), p.1010-1017</ispartof><rights>Pleiades Publishing, Ltd. 2020</rights><rights>Pleiades Publishing, Ltd. 2020.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c316t-ba5bb37618ee2bcd974c777d169d67c0849bc2674d593acbc38b8c977064604d3</citedby><cites>FETCH-LOGICAL-c316t-ba5bb37618ee2bcd974c777d169d67c0849bc2674d593acbc38b8c977064604d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S0030400X20070097$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S0030400X20070097$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>Klochkov, A. N.</creatorcontrib><creatorcontrib>Klimov, E. A.</creatorcontrib><creatorcontrib>Solyankin, P. M.</creatorcontrib><creatorcontrib>Konnikova, M. R.</creatorcontrib><creatorcontrib>Vasil’evskii, I. S.</creatorcontrib><creatorcontrib>Vinichenko, A. N.</creatorcontrib><creatorcontrib>Shkurinov, A. P.</creatorcontrib><creatorcontrib>Galiev, G. B.</creatorcontrib><title>THz Radiation of Photoconductive Antennas based on {LT-GaAa/GaAa:Si} Superlattice Structures</title><title>Optics and spectroscopy</title><addtitle>Opt. Spectrosc</addtitle><description>A material in the form of a multilayer structure based on low-temperature LT-GaAs grown on (111)A-oriented substrates is proposed for fabrication of THz photoconductive antennas. These structures contain active LT-GaAs layers and doping acceptor GaAs:Si-based layers. At the optical pump power of 19 mW and the bias voltage of 30 V, a photoconductive antenna based on the optimized {LT-GaAs/GaAs:Si} (111)A structure emits THz pulses with the average power of 2.3 μW at the pulse repetition frequency of 80 MHz; the conversion efficiency is 1.2 × 10
–4
. It is shown that the dependence of the integral power of THz pulses of the antenna based on the {LT-GaAs/GaAs:Si} (111)A structure on the applied voltage is superlinear; the dependence of this parameter on the optical pump power is plotted as a curve with saturation. It is shown that the designed antennas have a practical application in THz spectroscopy of biological solutions.</description><subject>Antennas</subject><subject>Dependence</subject><subject>Electric potential</subject><subject>Lasers</subject><subject>Low temperature</subject><subject>Multilayers</subject><subject>Optical Devices</subject><subject>Optics</subject><subject>Photonics</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Pulse repetition frequency</subject><subject>Silicon</subject><subject>Substrates</subject><subject>Superlattices</subject><subject>Terahertz Optics</subject><subject>Voltage</subject><issn>0030-400X</issn><issn>1562-6911</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNp1kE9LAzEQxYMoWKsfwFvA89rJJptsvJWirVBQ3AoehCX_qlvqpiZZQcXv7pYKHsTLzOH93pvhIXRK4JwQykYVAAUG8JADCAAp9tCAFDzPuCRkHw22crbVD9FRjCsAQkomB-hxMfvAd8o2KjW-xX6Jb5998sa3tjOpeXN43CbXtipiraKzuIc-54tsqsZqtB0XVfOFq27jwlql1BiHqxR6axdcPEYHS7WO7uRnD9H91eViMsvmN9PryXieGUp4yrQqtKaCk9K5XBsrBTNCCEu4tFwY6B_VJueC2UJSZbShpS6NFAI448AsHaKzXe4m-NfOxVSvfBfa_mSdMyo5FaQseorsKBN8jMEt601oXlR4rwnU2xLrPyX2nnzniT3bPrnwm_y_6Rtjg3L7</recordid><startdate>20200701</startdate><enddate>20200701</enddate><creator>Klochkov, A. N.</creator><creator>Klimov, E. A.</creator><creator>Solyankin, P. M.</creator><creator>Konnikova, M. R.</creator><creator>Vasil’evskii, I. S.</creator><creator>Vinichenko, A. N.</creator><creator>Shkurinov, A. P.</creator><creator>Galiev, G. B.</creator><general>Pleiades Publishing</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20200701</creationdate><title>THz Radiation of Photoconductive Antennas based on {LT-GaAa/GaAa:Si} Superlattice Structures</title><author>Klochkov, A. N. ; Klimov, E. A. ; Solyankin, P. M. ; Konnikova, M. R. ; Vasil’evskii, I. S. ; Vinichenko, A. N. ; Shkurinov, A. P. ; Galiev, G. B.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c316t-ba5bb37618ee2bcd974c777d169d67c0849bc2674d593acbc38b8c977064604d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Antennas</topic><topic>Dependence</topic><topic>Electric potential</topic><topic>Lasers</topic><topic>Low temperature</topic><topic>Multilayers</topic><topic>Optical Devices</topic><topic>Optics</topic><topic>Photonics</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Pulse repetition frequency</topic><topic>Silicon</topic><topic>Substrates</topic><topic>Superlattices</topic><topic>Terahertz Optics</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Klochkov, A. N.</creatorcontrib><creatorcontrib>Klimov, E. A.</creatorcontrib><creatorcontrib>Solyankin, P. M.</creatorcontrib><creatorcontrib>Konnikova, M. R.</creatorcontrib><creatorcontrib>Vasil’evskii, I. S.</creatorcontrib><creatorcontrib>Vinichenko, A. N.</creatorcontrib><creatorcontrib>Shkurinov, A. P.</creatorcontrib><creatorcontrib>Galiev, G. B.</creatorcontrib><collection>CrossRef</collection><jtitle>Optics and spectroscopy</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Klochkov, A. N.</au><au>Klimov, E. A.</au><au>Solyankin, P. M.</au><au>Konnikova, M. R.</au><au>Vasil’evskii, I. S.</au><au>Vinichenko, A. N.</au><au>Shkurinov, A. P.</au><au>Galiev, G. B.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>THz Radiation of Photoconductive Antennas based on {LT-GaAa/GaAa:Si} Superlattice Structures</atitle><jtitle>Optics and spectroscopy</jtitle><stitle>Opt. Spectrosc</stitle><date>2020-07-01</date><risdate>2020</risdate><volume>128</volume><issue>7</issue><spage>1010</spage><epage>1017</epage><pages>1010-1017</pages><issn>0030-400X</issn><eissn>1562-6911</eissn><abstract>A material in the form of a multilayer structure based on low-temperature LT-GaAs grown on (111)A-oriented substrates is proposed for fabrication of THz photoconductive antennas. These structures contain active LT-GaAs layers and doping acceptor GaAs:Si-based layers. At the optical pump power of 19 mW and the bias voltage of 30 V, a photoconductive antenna based on the optimized {LT-GaAs/GaAs:Si} (111)A structure emits THz pulses with the average power of 2.3 μW at the pulse repetition frequency of 80 MHz; the conversion efficiency is 1.2 × 10
–4
. It is shown that the dependence of the integral power of THz pulses of the antenna based on the {LT-GaAs/GaAs:Si} (111)A structure on the applied voltage is superlinear; the dependence of this parameter on the optical pump power is plotted as a curve with saturation. It is shown that the designed antennas have a practical application in THz spectroscopy of biological solutions.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S0030400X20070097</doi><tpages>8</tpages></addata></record> |
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| subjects | Antennas Dependence Electric potential Lasers Low temperature Multilayers Optical Devices Optics Photonics Physics Physics and Astronomy Pulse repetition frequency Silicon Substrates Superlattices Terahertz Optics Voltage |
| title | THz Radiation of Photoconductive Antennas based on {LT-GaAa/GaAa:Si} Superlattice Structures |
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