Making Large‐Area Titanium Disulfide Films at Reduced Temperature by Balancing the Kinetics of Sulfurization and Roughening

The synthesis of large‐area TiS2 thin films is reported at temperatures as low as 500 °C using a scalable two‐step method of metal film deposition followed by sulfurization in an H2S gas furnace. It is demonstrated that the lowest‐achievable sulfurization temperature depends strongly on the oxygen b...

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Veröffentlicht in:	Advanced functional materials 2020-09, Vol.30 (36), p.n/a
Hauptverfasser:	Li, Yifei, Singh, Akshay, Reidy, Kate, Jo, Seong Soon, Ross, Frances M., Jaramillo, Rafael
Format:	Artikel
Sprache:	eng
Schlagworte:	Hydrogen sulfide low temperature processing Materials science Metastable phases Roughening Sulfurization thin film synthesis Thin films Titanium titanium disulfide Transition metal compounds transition metal dichalcogenides
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