Ion composition of a multicomponent beam plasma formed by electron‐beam evaporation of a boron‐containing target in medium vacuum

Thin boron and boron nitride films are applied in microelectronics due to their high hardness and strength, and low electrical conductivity. However, methods for fabrication of such films are limited. One promising method is electron‐beam evaporation of a boron‐containing target to form a boron‐cont...

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Veröffentlicht in:	Plasma processes and polymers 2020-09, Vol.17 (9), p.n/a
Hauptverfasser:	Yushkov, Yury G., Oks, Efim M., Tyunkov, Andrey V., Zolotukhin, Denis B.
Format:	Artikel
Sprache:	eng
Schlagworte:	52.50.Dg 52.77.Dq Boron boron coatings Boron nitride Composition deposition Electrical resistivity Electron beams Evaporation hard coatings Melting points Plasma plasma‐cathode electron source Silicones
Online-Zugang:	Volltext
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