Ohmic contact formation mechanism of Ge-doped 6H-SiC

•Only two native-defect-induced shallow energy levels are found in Ge-doped-6H-SiC.•Raman and RBS/c reveal high quality of Ge-doped 6H-SiC.•Ge is a substitutional impurity.•The GeC bond is easy to break to generate carriers through the induced levels. We present a comprehensive investigation of mech...

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