Laterally Coupled 2D MoS2 Synaptic Transistor With Ion Gating
The dynamically active synaptic elements are the fundamental building blocks in neuromorphic systems towards artificial intelligence with computing and sensing capabilities. Here, a two-dimensional (2D) MoS 2 synaptic transistor is fabricated by using poly(ethylene oxide) (PEO) and lithium perchlora...
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| Veröffentlicht in: | IEEE electron device letters 2020-09, Vol.41 (9), p.1424-1427 |
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| creator | Wang, Yarong Yang, Yafen He, Zhenyu Zhu, Hao Chen, Lin Sun, Qingqing Zhang, David Wei |
| description | The dynamically active synaptic elements are the fundamental building blocks in neuromorphic systems towards artificial intelligence with computing and sensing capabilities. Here, a two-dimensional (2D) MoS 2 synaptic transistor is fabricated by using poly(ethylene oxide) (PEO) and lithium perchlorate (LiClO 4 ) as a laterally coupled ion-conducting electrolyte. Due to the strong electric double layer (EDL) effect, a low operating voltage of 1 V and a high current on/off ratio of 10 5 have been obtained. In addition, short-term and long-term plasticity of typical synaptic behaviors have been successfully simulated, such as excitatory postsynaptic current, paired pulse facilitation long-term potentiation, long-term depression, and dynamic filtering. These results can provide new opportunities and strategies in building hybrid and low-dimensional neuromorphic systems for future artificial intelligence applications. |
| doi_str_mv | 10.1109/LED.2020.3008728 |
| format | Article |
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These results can provide new opportunities and strategies in building hybrid and low-dimensional neuromorphic systems for future artificial intelligence applications.</description><subject>Artificial intelligence</subject><subject>Computer simulation</subject><subject>Electric double layer</subject><subject>Ethylene oxide</subject><subject>Hybrid systems</subject><subject>ion conduction</subject><subject>laterally coupling</subject><subject>Lithium perchlorates</subject><subject>Molybdenum disulfide</subject><subject>Polyethylene oxide</subject><subject>Semiconductor devices</subject><subject>short-term and long-term plasticity</subject><subject>Synaptic transistor</subject><subject>Transistors</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNotjU1Lw0AURQdRsFb3gpsB16nvzZuPZOFC2loLERetuAzTZEZTYhInk0X_vZW6Olw43MPYLcIMEbKHfLmYCRAwI4DUiPSMTVCpNAGl6ZxNwEhMCEFfsqth2AOglEZO2GNuowu2aQ583o194youFvy12wi-ObS2j3XJt8G2Qz3ELvCPOn7xddfylY11-3nNLrxtBnfzzyl7f15u5y9J_rZaz5_ypEaimCAYK73fpcarSmWpKgmVr5zWkpQ2oHfSi1LuslIZIq094d8Ebz1WunQ0Zfen3z50P6MbYrHvxtAek4WQlOoMjYajdXeyaudc0Yf624ZDkSFlpIh-ASruUbE</recordid><startdate>20200901</startdate><enddate>20200901</enddate><creator>Wang, Yarong</creator><creator>Yang, Yafen</creator><creator>He, Zhenyu</creator><creator>Zhu, Hao</creator><creator>Chen, Lin</creator><creator>Sun, Qingqing</creator><creator>Zhang, David Wei</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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| subjects | Artificial intelligence Computer simulation Electric double layer Ethylene oxide Hybrid systems ion conduction laterally coupling Lithium perchlorates Molybdenum disulfide Polyethylene oxide Semiconductor devices short-term and long-term plasticity Synaptic transistor Transistors |
| title | Laterally Coupled 2D MoS2 Synaptic Transistor With Ion Gating |
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